Fractional form of the 0.7(2e2/h) feature
Abstract
We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity of the spin-dependent transport of holes are studied by varying the value of the external magnetic field and the top gate voltage that are applied perpendicularly to the plane of the double-slit ring and revealed by the Aharonov-Bohm (AB) and Aharonov-Casher (AC) conductance oscillations, respectively. Firstly, the amplitude and phase sensitivity of the 0.7(2e2/h) feature of the hole quantum conductance staircase revealed by the quantum point contact inserted in the one of the arms of the double-slit ring are found to result from the interplay of the spontaneous spin polarization and the Rashba spin-orbit interaction (SOI). Secondly, the values of the AC conductance oscillations caused by the Rashba SOI are found to take the fractional form with both the plateaus and steps as a function of the top gate voltage.
Cite
@article{arxiv.cond-mat/0608632,
title = {Fractional form of the 0.7(2e2/h) feature},
author = {N. T. Bagraev and N. G. Galkin and W. Gehlhoff and L. E. Klyachkin and A. M. Malyarenko and I. A. Shelykh},
journal= {arXiv preprint arXiv:cond-mat/0608632},
year = {2007}
}
Comments
5pages, 5 figures