Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-On-Insulator Metal-Oxide- Semiconductor Field-Effect-Transistors due to Induced Back-Gate Step Potential
In this letter we discuss how the short channel behavior in sub 100 nm channel range can be improved by inducing a step surface potential profile at the back gate of an asymmetrical double gate (DG) Silicon-On-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect- Transistor (MOSFET) in which the front gate consists of two materials with different work functions.
@article{arxiv.1008.3016,
title = {Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-On-Insulator Metal-Oxide- Semiconductor Field-Effect-Transistors due to Induced Back-Gate Step Potential},
author = {M. Jagadesh Kumar and G. V. Reddy},
journal= {arXiv preprint arXiv:1008.3016},
year = {2010}
}