Controlled single electron transfer between Si:P dots

T. M. Buehler; V. Chan; A. J. Ferguson; A. S. Dzurak; F. E. Hudson; D. J. Reilly; A. R. Hamilton; R. G. Clark; D. N. Jamieson; C. Yang; C. I. Pakes; S. Prawer

doi:10.1063/1.2203740

Controlled single electron transfer between Si:P dots

Mesoscale and Nanoscale Physics 2009-11-11 v6

Authors: T. M. Buehler , V. Chan , A. J. Ferguson , A. S. Dzurak , F. E. Hudson , D. J. Reilly , A. R. Hamilton , R. G. Clark , D. N. Jamieson , C. Yang , C. I. Pakes , S. Prawer

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Abstract

We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a differential bias across the dots, electron transfer is observed, using single electron transistors in both dc- and rf-mode as charge detectors. With the possibility to scale the dots down to few and even single atoms these results open the way to a new class of precision-doped quantum dots in silicon.

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@article{arxiv.cond-mat/0506594,
  title  = {Controlled single electron transfer between Si:P dots},
  author = {T. M. Buehler and V. Chan and A. J. Ferguson and A. S. Dzurak and F. E. Hudson and D. J. Reilly and A. R. Hamilton and R. G. Clark and D. N. Jamieson and C. Yang and C. I. Pakes and S. Prawer},
  journal= {arXiv preprint arXiv:cond-mat/0506594},
  year   = {2009}
}

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3 figures, 3 pages

Controlled single electron transfer between Si:P dots

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