Charge dynamics of a single donor coupled to a few electrons quantum dot in silicon

G. Mazzeo; E. Prati; M. Belli; G. Leti; S. Cocco; M. Fanciulli; F. Guagliardo; G. Ferrari

doi:10.1063/1.4721433

Charge dynamics of a single donor coupled to a few electrons quantum dot in silicon

Mesoscale and Nanoscale Physics 2015-06-04 v1

Authors: G. Mazzeo , E. Prati , M. Belli , G. Leti , S. Cocco , M. Fanciulli , F. Guagliardo , G. Ferrari

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Abstract

We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field effect transistor) biased near threshold in the SET regime with two side gates to control both the device conductance and the donor charge. Temperature and magnetic field independent tunneling time is measured. We measure the statistics of the transfer of electrons observed when the ground state D0 of the donor is aligned with the SET states.

Keywords

charge transfer dynamics silicon quantum dot phosphorous donor n-MOSFET single electron transistor tunneling time

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@article{arxiv.1203.5264,
  title  = {Charge dynamics of a single donor coupled to a few electrons quantum dot in silicon},
  author = {G. Mazzeo and E. Prati and M. Belli and G. Leti and S. Cocco and M. Fanciulli and F. Guagliardo and G. Ferrari},
  journal= {arXiv preprint arXiv:1203.5264},
  year   = {2015}
}

Charge dynamics of a single donor coupled to a few electrons quantum dot in silicon

Abstract

Keywords

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