Electron tunnel rates in a donor-silicon single electron transistor hybrid

Hans Huebl; Christopher D. Nugroho; Andrea Morello; Christopher C. Escott; Mark A. Eriksson; Changyi Yang; David N. Jamieson; Robert G. Clark; Andrew S. Dzurak

doi:10.1103/PhysRevB.81.235318

Electron tunnel rates in a donor-silicon single electron transistor hybrid

Mesoscale and Nanoscale Physics 2011-01-04 v1

Authors: Hans Huebl , Christopher D. Nugroho , Andrea Morello , Christopher C. Escott , Mark A. Eriksson , Changyi Yang , David N. Jamieson , Robert G. Clark , Andrew S. Dzurak

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Abstract

We investigate a hybrid structure consisting of $20\pm4$ implanted $^{31}$ P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby centers, turning from the off state to the conducting state when the charge configuration is changed. We present a method to measure fast electron tunnel rates between donors and the SiSET island, using a pulsed voltage scheme and low-bandwidth current detection. The experimental findings are quantitatively discussed using a rate equation model, enabling the extraction of the capture and emission rates.

Keywords

silicon single electron transistor donor electron tunnel rates rate equation model capture and emission rates hybrid structure

Cite

@article{arxiv.0912.2431,
  title  = {Electron tunnel rates in a donor-silicon single electron transistor hybrid},
  author = {Hans Huebl and Christopher D. Nugroho and Andrea Morello and Christopher C. Escott and Mark A. Eriksson and Changyi Yang and David N. Jamieson and Robert G. Clark and Andrew S. Dzurak},
  journal= {arXiv preprint arXiv:0912.2431},
  year   = {2011}
}

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10 pages, 3 figures

Electron tunnel rates in a donor-silicon single electron transistor hybrid

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