Strongly correlated charge transport in silicon MOSFET quantum dots
Abstract
Quantum shot noise probes the dynamics of charge transfers through a quantum conductor, reflecting whether quasiparticles flow across the conductor in a steady stream, or in syncopated bursts. We have performed high-sensitivity shot noise measurements in a quantum dot obtained in a silicon metal-oxide-semiconductor field-effect transistor. The quality of our device allows us to precisely associate the different transport regimes and their statistics with the internal state of the quantum dot. In particular, we report on large current fluctuations in the inelastic cotunneling regime, corresponding to different highly-correlated, non-Markovian charge transfer processes. We have also observed unusually large current fluctuations at low energy in the elastic cotunneling regime, the origin of which remains to be fully investigated.
Cite
@article{arxiv.1805.08710,
title = {Strongly correlated charge transport in silicon MOSFET quantum dots},
author = {Minky Seo and Preden Roulleau and Patrice Roche and D. Christian Glattli and Marc Sanquer and Xavier Jehl and Louis Hutin and Sylvain Barraud and Francois D. Parmentier},
journal= {arXiv preprint arXiv:1805.08710},
year = {2018}
}
Comments
Includes supplementary material