English

Topological insulator single-electron transistors for charge sensing applications

Mesoscale and Nanoscale Physics 2026-03-26 v1 Materials Science

Abstract

We present topological insulator (TI)-based single-electron transistors (SETs) as magnetic-field-compatible charge sensing devices that are easily integrable with TI-superconductor hybrid platforms. We observe well-resolved Coulomb diamonds in the charge-stability diagrams of our devices confirming the charge quantization and single-electron transport. In some devices, the Coulomb resonances show persistent shifts corresponding up to \sim e/2 charge. An axial magnetic field further displaces these shifts to higher or lower gate voltages. We find that the axial magnetic-field dependence of the shifts is consistent with the Zeeman shift of a trap state coupled to the SET, and we reproduce the observations using numerical simulations. The resonance shifts are therefore identified as a consequence of the sensitivity of our TI-SET devices to charges in proximity. Establishing this charge sensing capability is a first step toward integrating TI-SETs as charge sensors in more complex TI-based hybrid devices, with the overarching goal of detecting and braiding Majorana zero modes.

Keywords

Cite

@article{arxiv.2603.24220,
  title  = {Topological insulator single-electron transistors for charge sensing applications},
  author = {Omargeldi Atanov and Junya Feng and Jens Brede and Oliver Breunig and Yoichi Ando},
  journal= {arXiv preprint arXiv:2603.24220},
  year   = {2026}
}

Comments

Total 14 pages; 7 pages of main text with 4 figures, 7 pages of supplementary information with 4 figures. The raw data and codes are available at the online depository Zenodo with https://doi.org/10.5281/zenodo.19098398

R2 v1 2026-07-01T11:37:10.919Z