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A qubit sensor with an electric dipole moment acquires an additional contribution to its depolarization rate when it is placed in the vicinity of a polar or dielectric material as a consequence of electrical noise arising from polarization…

This letter investigates the bias-dependent low frequency noise of single layer graphene field-effect transistors. Noise measurements have been conducted with electrolyte-gated graphene transistors covering a wide range of gate and drain…

介观与纳米尺度物理 · 物理学 2018-10-22 Nikolaos Mavredakis , Ramon Garcia Cortadella , Andrea Bonaccini Calia , Jose A. Garrido , David Jiménez

Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for applications in low energy-dissipative spintronics and…

介观与纳米尺度物理 · 物理学 2019-09-09 Yumei Jing , Shaoyun Huang , Jinxiong Wu , Mengmeng Meng , Xiaobo Li , Yu Zhou , Hailin Peng , H. Q. Xu

Fluctuating electric fields emanating from surfaces are a primary source of decoherence in trapped ion qubits. Here, we show that superradiant phonon-induced excitation exchange between adatoms can lead to a reduction of electric field…

量子物理 · 物理学 2022-01-17 P N Thomas Lloyd , Valentin Walther , Hossein Sadeghpour

Measuring and understanding electric field noise from bulk material and surfaces is important for many areas of physics. In this work, we introduce a method to detect in situ different sources of electric field noise using a single trapped…

原子物理 · 物理学 2019-09-04 K. Lakhmanskiy , P. C. Holz , D. Schärtl , B. Ames , R. Assouly , T. Monz , Y. Colombe , R. Blatt

By configuring a radio-frequency single-electron transistor as a mixer, we demonstrate a unique implementation of this device, that achieves good charge sensitivity with large bandwidth about a tunable center frequency. In our…

介观与纳米尺度物理 · 物理学 2016-08-31 L. J. Swenson , D. R. Schmidt , J. S. Aldridge , D. K. Wood , A. N. Cleland

Hg$_{1-x}$Cd$_x$Te is a unique material with the band-gap tunable by the temperature, pressure, and cadmium content in a wide range, from 1.6 eV to inverted band-gap of -0.3 eV. This makes Hg$_{1-x}$Cd$_x$Te one of the key materials for…

Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been identified as the main source of noise at low frequency. It often originates from an ensemble of a huge number of charges trapping and detrapping.…

介观与纳米尺度物理 · 物理学 2010-10-22 N. Clement , K. Nishiguchi , A. Fujiwara , D. Vuillaume

Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we…

介观与纳米尺度物理 · 物理学 2020-07-27 Elliot J. Connors , JJ Nelson , Haifeng Qiao , Lisa F. Edge , John M. Nichol

Since the very first experiments, superconducting circuits have suffered from strong coupling to environmental noise, destroying quantum coherence and degrading performance. In state-of-the-art experiments, it is found that the relaxation…

介观与纳米尺度物理 · 物理学 2015-08-04 Clemens Müller , Jürgen Lisenfeld , Alexander Shnirman , Stefano Poletto

We probe electric-field noise in a surface ion trap for ion-surface distances $d$ between 50 and 300 $\mu\mathrm{m}$ in the normal and planar directions. We find the noise distance dependence to scale as $d^{-2.6}$ in our trap and a…

量子物理 · 物理学 2019-12-11 Da An , Clemens Matthiesen , Erik Urban , Hartmut Häffner

We study electron transport through a small metallic island in the perturbative regime. Using a recently developed diagrammatic technique, we calculate the occupation of the island as well as the conductance through the transistor in forth…

介观与纳米尺度物理 · 物理学 2009-10-30 Jürgen König , Herbert Schoeller , Gerd Schön

We report on the influence of low gamma irradiation (10^4 Gy) on the noise properties of individual carbon nanotube (CNT) field-effect transistors (FETs) with different gate configurations and two different dielectric layers, SiO2 and…

We report measurements of charge configurations and charge transfer dynamics in a hybrid single-electron box composed of aluminum and copper. We used two single-electron transistors (SETs) to simultaneously read out different parts of the…

介观与纳米尺度物理 · 物理学 2014-07-08 Chia-Heng Sun , Po-Chen Tai , Jheng-An Jiang , Cen-Shawn Wu , Jeng-Chung Chen , Yung-Fu Chen

We present a systematic study on low-frequency current fluctuations of nano-devices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms,…

材料科学 · 物理学 2007-12-18 Yu-Ming Lin , Joerg Appenzeller , Joachin Knoch , Zhihong Chen , Phaedon Avouris

We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs High-Electron-Mobility Transistors (HEMTs). We integrate this circuit…

介观与纳米尺度物理 · 物理学 2024-12-04 Mayer M. Feldman , Gordian Fuchs , Tiffany Liu , Luke A. D'Imperio , M. David Henry , Eric A. Shaner , Stephen A. Lyon

We report on the low frequency noise in the ballistic point-contacts between a silver tip and a niobium foil. The ballistic nature of the point-contacts is confirmed by Andreev reflection spectroscopy at low bias voltage with the Nb foil…

超导电性 · 物理学 2014-10-15 Jian Wei , Goutam Sheet , Venkat Chandrasekhar

We investigate single quasiparticle excitation dynamics on a small superconducting aluminum island connected to normal metallic leads by tunnel junctions. We find the island to be free of excitations within the measurement resolution…

超导电性 · 物理学 2013-01-23 V. F. Maisi , S. V. Lotkhov , A. Kemppinen , A. Heimes , J. T. Muhonen , J. P. Pekola

Motional heating of ions in micro-fabricated traps is a challenge hindering experimental realization of large-scale quantum processing devices. Recently a series of measurements of the heating rates in surface-electrode ion traps…

量子物理 · 物理学 2015-05-28 A. Safavi-Naini , P. Rabl , P. Weck , H. R. Sadeghpour

We analyze the noise properties of two single electron transistors (SETs) coupled via a shared voltage gate consisting of a nanomechanical resonator. Working in the regime where the resonator can be treated as a classical system, we find…

介观与纳米尺度物理 · 物理学 2009-11-11 D. A. Rodrigues , A. D. Armour