Cotunneling at resonance for the single-electron transistor
Mesoscale and Nanoscale Physics
2009-10-30 v1
Abstract
We study electron transport through a small metallic island in the perturbative regime. Using a recently developed diagrammatic technique, we calculate the occupation of the island as well as the conductance through the transistor in forth order in the tunneling matrix elements, a process referred to as cotunneling. Our formulation does not require the introduction of a cut-off. At resonance we find significant modifications of previous theories and good agreement with recent experiments.
Keywords
Cite
@article{arxiv.cond-mat/9702196,
title = {Cotunneling at resonance for the single-electron transistor},
author = {Jürgen König and Herbert Schoeller and Gerd Schön},
journal= {arXiv preprint arXiv:cond-mat/9702196},
year = {2009}
}
Comments
5 pages, Revtex, 5 eps-figures