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Micromechanical electrometry of single-electron transistor island charge

Mesoscale and Nanoscale Physics 2009-11-07 v1 Quantum Physics
Authors: M. P. Blencowe , Y. Zhang
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Abstract

We consider the possibility of using a micromechanical gate electrode located just above the island of a single-electron transistor to measure directly the fluctuating island charge due to tunnelling electrons.

Keywords

single-electron transistor micromechanical electrometry island charge tunneling electrons gate electrode

Cite

@article{arxiv.cond-mat/0109208,
  title  = {Micromechanical electrometry of single-electron transistor island charge},
  author = {M. P. Blencowe and Y. Zhang},
  journal= {arXiv preprint arXiv:cond-mat/0109208},
  year   = {2009}
}

Comments

To appear in Phonons 2001 Proceedings (Physica B)

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