Related papers: Micromechanical electrometry of single-electron tr…
A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether. The proposed method can be useful for experimental study of charging effects in…
We report on measurements on a sample consisting of two nominally identical single-electron transistors the islands of which are coupled capacitively. One transistor at a time is operated as electron box. The remaining transistor is used as…
We have used a superconducting single-electron transistor as a DC-electrometer that is strongly coupled to the metal island of another transistor. With this set-up, it is possible to directly measure the charge distribution on this island.…
Motivated by recent experiments, we calculate both the average current and the current fluctuations for a metallic island which oscillates between two symmetric electrodes. Electrons can only tunnel on or off the island when it is close to…
Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional…
In mesoscopic and nanoscale systems at low temperatures, charge carriers are typically not in thermal equilibrium with the surrounding lattice. The resulting, non-equilibrium dynamics of electrons has only begun to be explored.…
We propose a new method of direct detection of spin accumulation, which overcomes problems of previous measurement schemes. A spin dependent current in a single-electron transistor with ferromagnetic electrodes leads to spin accumulation on…
We perform direct thermovoltage measurements in a single-electron transistor, using on-chip local thermometers, both in the linear and non-linear regimes. Using a model which accounts for co-tunneling, we find excellent agreement with the…
We study strong electron tunneling in the single-electron box, a small metallic island coupled to an electrode by a tunnel junction, by means of quantum Monte Carlo simulations. We obtain results, at arbitrary tunneling strength, for the…
Interplay of cotunneling and single-electron tunneling in a thermally isolated single-electron transistor (SET) leads to peculiar overheating effects. In particular, there is an interesting crossover interval where the competition between…
We study electron transport through a small metallic island in the perturbative regime. Using a recently developed diagrammatic technique, we calculate the occupation of the island as well as the conductance through the transistor in forth…
We present experiments on a superconductor-normal metal electron refrigerator in a regime where single-electron charging effects are significant. The system functions as a heat transistor, i.e., the heat flux out from the normal metal…
Spin dependent transport in a ferromagnet/superconductor/ferromagnet single electron transistor is studied theoretically with spin accumulation, spin relaxation, gap suppression, and charging effects taken into account. A strong dependence…
Background charge fluctuators are studied individually by means of a modified single-electron pump. Operation of the device in a feedback mode allows electrometric sensing of the charged background and its behavior upon electric potential…
Quantum fluctuations of the charge in the single electron box are investigated. Based on a diagrammatic expansion we calculate the average island charge number and the effective charging energy in third order in the tunneling conductance.…
Spin dependent single electron tunneling in ferromagnetic double junctions is analysed theoretically in the limit of sequential tunneling. The influence of discrete energy spectrum of the central electrode (island)on the spin accumulation,…
We consider a single-electron transistor (SET) whose central island is a nanomechanical oscillator. The gate capacitance of the SET depends on the mechanical displacement, thus, the vibrations of the island vibrations may strongly influence…
Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…
We investigate the properties of a hybrid single electron transistor, involving a small superconducting island sandwiched between normal metal leads, which is driven by dc plus ac voltages. In order to describe its properties we derive from…
We discuss the suppression of Coulomb charging effects on a small metallic island coupled to an electrode by a tunnel junction. At high temperatures the quantum corrections to the classical charging energy $E_c=e^2/2C$, where $C$ is the…