Single-electron transistor with ferromagnetic outer electrodes and nonmagnetic island is studied theoretically. Nonequilibrium electron spin distribution in the island is caused by tunneling current. The dependencies of the magnetoresistance ratio δ on the bias and gate voltages show the dips which are directly related to the induced separation of Fermi levels for electrons with different spins. Inside a dip δ can become negative.
@article{arxiv.cond-mat/9804292,
title = {Nonequilibrium spin distribution in single-electron transistor},
author = {Alexander N. Korotkov and V. I. Safarov},
journal= {arXiv preprint arXiv:cond-mat/9804292},
year = {2009}
}