相关论文: Aluminum Single Electron Transistors with Islands …
We investigate anomalous ion-motional heating, a limitation to multi-qubit quantum-logic gate fidelity in trapped-ion systems, as a function of ion-electrode separation. Using a multi-zone surface-electrode trap in which ions can be held at…
Semiconductor qubits are appealing for building quantum processors as they may be densely integrated due to small footprint. However, a high density raises the issue of noise correlated across different qubits, which is of practical concern…
In this thesis I find an analytic expression for the conductance of a single electron transistor in the regime when temperature, level spacing, and charging energy of an island are all of the same order. I also study the correction to the…
Low-frequency $1/f^{\gamma}$ noise is ubiquitous, even in high-end electronic devices. For qubits such noise results in decrease of their coherence times. Recently, it was found that adsorbed O$_2$ molecules provide the dominant…
Resistance noise spectroscopy is applied to bulk single crystals of the quasi-two-dimensional organic Mott insulator $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Cl both under moderate pressure and at ambient-pressure conditions. When pressurized,…
Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron…
We report on the low-frequency electronic noise in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the…
Electronic circuits are built by combining components with known current/voltage characteristics, which are intrinsic to each component and independent of the rest of the circuit. This approach breaks down for nanostructures placed at…
This article explains phase noise, jitter, and some slower phenomena in digital integrated circuits, focusing on high-demanding, noise-critical applications. We introduce the concept of phase type and time type phase noise. The rules for…
A field-effect transistor (FET) amplifier for small voltage signals is presented. Its design is elementary and the construction can be afforded by anyone. Despite its simplicity, with a voltage noise less than 1 nV/sqrt(Hz), it outperforms…
We report low-frequency 1/f noise measurements of degenerately doped Si:P \delta-layers at 4.2K. The noise was found to be over six orders of magnitude lower than that of bulk Si:P systems in the metallic regime and is one of the lowest…
Studies about the constructive aspects of noise and fluctuations in different non-linear systems have shown that the addition of external noise to systems with an intrinsic noise may result in a less noisy response. Recently, the…
Phosphorene is a unique single elemental semiconductor with two-dimensional layered structures. In this letter, we study the transistor behavior on mechanically exfoliated few-layer phosphorene with the top-gate. We achieve a high…
We report an accurate measurement of the phase noise of a thermally limited electronic oscillator at 300 K. By thermally limited we mean that the white signal-to-noise ratio of the oscillator is at or near the level generated by the thermal…
We highlight a new "transverse" interference effect, arising from the coupling between electrons and holes, induced by a superconducting island in contact with a normal metal. As an example we compute the electrical conductance G of a…
The distribution of nearest-neighbour spacings of Coulomb blockade oscillation peaks in normal conducting aluminum single electron transistors is found to be non-Gaussian. A pronounced tail to reduced spacings is observed, which we…
Some statistical properties of finite-time stability exponents in the standard map can be estimated analytically. The mean exponent averaged over the entire phase space behaves quite differently from all the other cumulants. Whereas the…
We have investigated the contact resistance of rubrene single-crystal field-effect transistors (FETs) with Nickel electrodes by performing scaling experiments on devices with channel length ranging from 200 nm up to 300 $\mu$m. We find that…
We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance…
1/f noise in current biased La0.82Ca0.18MnO3 crystals has been investigated. The temperature dependence of the noise follows the resistivity changes with temperature suggesting that resistivity fluctuations constitute a fixed fraction of…