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The electric-field noise above a layered structure composed of a planar metal electrode covered by a thin dielectric is evaluated and it is found that the dielectric film considerably increases the noise level, in proportion to its…

We report that low frequency (up to 200 kHz) noise spectra of magnetic tunnel junctions with areas ~10^{-10}cm^2$ at 10 Kelvin deviate significantly from the typical 1/f behavior found in large area junctions at room temperature. In most…

We study electron transport through a small metallic island in the perturbative regime. Using a diagrammatic real-time technique, we calculate the occupation of the island as well as the conductance through the transistor at arbitrary…

We have investigated a double-island single-electron transistor (DISET) coupled to a floating metal double-dot (DD). Low-temperature transport measurements were used to map out the charge configurations of both the DISET and the DD. A…

Radio-frequency (rf)- operated single-electron transistors (SETs) are high-sensitivity, fast-response electrometers, which are valuable for developing new insights into single-charge dynamics. We investigate high-frequency (up to 1 MHz)…

We report room-temperature electric field noise measurements combined with in-situ surface characterization and cleaning of a microfabricated ion trap. We used a single-ion electric field noise sensor in combination with surface cleaning…

Substrate plays a crucial role in determining transport and low frequency noise behavior of graphene field effect devices. Typically, heavily dope Si/SiO$_2$ substrate is used to fabricate these devices for efficient gating.…

We have used a superconducting single-electron transistor as a DC-electrometer that is strongly coupled to the metal island of another transistor. With this set-up, it is possible to directly measure the charge distribution on this island.…

A single-hole transistor is patterned in a p-type, C-doped GaAs/AlGaAs heterostructure by AFM oxidation lithography. Clear Coulomb blockade resonances have been observed at T=300 mK. A charging energy of ~ 1.5 meV is extracted from Coulomb…

We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with "thin" (2-3 atomic layers) and "thick" (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2…

We present results on a double-island single-electron transistor (DISET) operated at radio-frequency (rf) for fast and highly sensitive detection of charge motion in the solid state. Using an intuitive definition for the charge sensitivity,…

Electric field noise from fluctuating patch potentials is a significant problem for a broad range of precision experiments, including trapped ion quantum computation and single spin detection. Recent results demonstrated strong suppression…

We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by…

We have developed a new method for fabrication of ultra-low noise silver-silver chloride (Ag-AgCl) reference electrode with dramatically high stability, useful in biomedical precise measurements. Low noise level and high stability are the…

We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ($32 \times 14~\mathrm{\mu m}$) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled…

Here we find the increase in 1/f noise of superconducting resonators at low temperatures to be completely incompatible with the standard tunneling model (STM) of Two Level Systems (TLS), which has been used to describe low-frequency noise…

Telegraphic noise is one of the most significant problems that arises when making sensitive measurements with lateral electrostatic devices. In this paper we demonstrate that a wafer which had only produced devices with significant…

We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has…

Single electron transistors (SETs) are very sensitive electrometers and they can be used in a range of applications. In this paper we give an introduction to the SET and present a full quantum mechanical calculation of how noise is…

The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field effect transistors, can be as adverse as the contact resistance…