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We propose a model of $1/f$ noise in semiconductors based on the drift of individual charge carriers and their interaction with the trapping centers. We assume that the trapping centers are homogeneously distributed in the material. The…

We theoretically propose a method to perform in situ measurements of charge noise during logical operations in silicon quantum dot spin qubits. Our method does not require ancillary spectator qubits but makes use of the valley degree of…

Surface noise is a detrimental issue for sensing devices based on shallow nitrogen vacancy (NV) color center diamonds. A recent experiment indicates that electric field noise is significant compared to magnetic field noise. They also found…

We have carried out numerical simulations of shot noise in 2D arrays of single-electron islands with random background charges. The results show that in contrast with the 1D arrays, at low currents the current noise is strongly colored, and…

We review the latest progress in understanding the fundamental noise properties of a coherent single electron emitter known as the mesoscopic capacitor. The system consists of a sub-micron cavity connected to a two-dimensional electron gas…

We report the first measurement of 1/f type noise associated with electronic spin transport, using single layer graphene as a prototypical material with a large and tunable Hooge parameter. We identify the presence of two contributions to…

We investigate low-frequency noise in a spin-qubit device made in isotopically purified Si/Si-Ge. Observing sizable cross-correlations among energy fluctuations of different qubits, we conclude that these fluctuations are dominated by…

We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs/AlGaAs devices. Via a 2-D self-consistent simulation of the conduction band profile we show that this…

Background charge rearrangements in metallic single-electron transistors are modelled in two-level tunnelling systems as a Poisson process with a scale parameter as only variable. The model explains the recent observation of asymmetric…

Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the…

Charge noise is critical in the performance of gate-controlled quantum dots (QDs). Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET),…

We investigate the intrinsic noise of a micro-mechanical displacement detector based on the radio-frequency single-electron transistor (rf-SET). Using the noise analysis of a SET by Korotkov as our starting point, we determine the spectral…

To analyze the state of injected carrier streams of different electron sources, we propose to use correlation measurements at a quantum point contact with the different sources connected via chiral edge states to the two inputs. In…

The same charge sensitive preamplifier and discriminator circuit with different isolation strategies has been tested to compare the isolation of both analog and digital circuits from the substrate of a 65nm bulk CMOS process to the…

This paper reports a novel simulation methodology for analysis and prediction of substrate noise impact on analog / RF circuits taking into account the role of the parasitic resistance of the on-chip interconnect in the impact mechanism.…

The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility…

We measured the low frequency (10mHz < f < 10Hz) resistance fluctuations (Noise) in single crystalline ferromagnetic Ni nanowires (diameter ~35nm) in the temperature range 80K-300K. The noise spectral power shows 1/f dependence. The…

We demonstrate the use of a single trapped ion as a sensor to probe electric-field noise from interchangeable test surfaces. As proof of principle, we measure the magnitude and distance dependence of electric-field noise from two…

ESR-STM is an emerging technique which is capable of detecting the precession of a single spin. We discuss the mechanism of ESR-STM based on a direct exchange coupling between the tunneling electrons and the local precessing spin S. We…

We show that $1/f$-noise in the variable range hopping regime is related to transitions of many-electrons clusters (fluctuators) between two almost degenerate states. Giant fluctuation times necessary for $1/f$-noise are provided by slow…