Observing sub-microsecond telegraph noise with the radio frequency single electron transistor
Abstract
Telegraph noise, which originates from the switching of charge between meta-stable trapping sites, becomes increasingly important as device sizes approach the nano-scale. For charge-based quantum computing, this noise may lead to decoherence and loss of read out fidelity. Here we use a radio frequency single electron transistor (rf-SET) to probe the telegraph noise present in a typical semiconductor-based quantum computer architecture. We frequently observe micro-second telegraph noise, which is a strong function of the local electrostatic potential defined by surface gate biases. We present a method for studying telegraph noise using the rf-SET and show results for a charge trap in which the capture and emission of a single electron is controlled by the bias applied to a surface gate.
Cite
@article{arxiv.cond-mat/0409568,
title = {Observing sub-microsecond telegraph noise with the radio frequency single electron transistor},
author = {T. M. Buehler and D. J. Reilly and R. P. Starrett and V. C. Chan and A. R. Hamilton and A. S. Dzurak and R. G. Clark},
journal= {arXiv preprint arXiv:cond-mat/0409568},
year = {2009}
}
Comments
Accepted for publication in Journal of Applied Physics. Comments always welcome, email djr@phys.unsw.edu.au, tbuehler@phys.unsw.edu.au