Single-layer Graphene (SLG) is a promising material for sensing applications. High performance graphene sensors can be achieved when Interdigitated Electrodes (IDE) are used. In this research work, we fabricated SLG micro-ribbon (GMR) devices with IDE having different geometric parameters. 1/f noise behavior was observed in all of the examined devices, and in some cases random telegraph noise (RTN) signals suggesting that carrier trapping/de-trapping is taking place. Our experimental results indicate that the geometrical characteristics can have a crucial impact on device performance, due to the direct area dependence of the noise level.
@article{arxiv.2502.01348,
title = {1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes},
author = {Georgia Samara and Nikolaos Vasileiadis and Alexandros Mavropoulis and Christoforos Theodorou and Konstantinos Papagelis and Panagiotis Dimitrakis},
journal= {arXiv preprint arXiv:2502.01348},
year = {2025}
}