We investigate the tunneling shot noise limits on the sensitivity of a micromechanical displacement detector based on a metal junction, radio-frequency single-electron transistor (rf-SET). In contrast with the charge sensitivity of the rf-SET electrometer, the displacement sensitivity improves with increasing gate voltage bias and, with a suitably optimized rf-SET, displacement sensitivities of 10−6A˚/Hz may be possible.
@article{arxiv.cond-mat/0009272,
title = {Sensitivity of a micromechanical displacement detector based on the radio-frequency single-electron transistor},
author = {Miles P. Blencowe and Martin N. Wybourne},
journal= {arXiv preprint arXiv:cond-mat/0009272},
year = {2009}
}