In this letter, we describe operation of a radio-frequency superconducting single electron transistor (RF-SSET) with an on-chip superconducting LC matching network consisting of a spiral inductor L and its capacitance to ground. The superconducting network has a lower parasitic capacitance and gives a better matching for the RF-SSET than does a commercial chip inductor. Moreover, the superconducting network has negligibly low dissipation, leading to sensitive response to changes in the RF-SSET impedance. The charge sensitivity 2.4*10^-6 e/(Hz)^1/2 in the sub-gap region and energy sensitivity of 1.9 hbar indicate that the RF-SSET is operating in the vicinity of the shot noise limit.
@article{arxiv.0708.1007,
title = {On-Chip Matching Networks for Radio-Frequency Single-Electron-Transistors},
author = {W. W. Xue and Z. Ji and B. Davis and Feng Pan and J. Stettenheim and T. J. Gilheart and A. J. Rimberg},
journal= {arXiv preprint arXiv:0708.1007},
year = {2009}
}
Comments
3 pages, 3 figures, REVTeX 4. To appear in Appl. Phys. Lett