We propose the design of a reconfigurable impedance matching network for the lower RF frequency band, based on a developed RF-MEMS technology. The circuit is composed of RF-MEMS ohmic relays, metal-insulator-metal (MIM) capacitors and suspended spiral inductors, all integrated on a high resistivity Silicon substrate. The presented circuit is well-suited for all applications requiring adaptive impedance matching between two in principle unknown cascaded RF-circuits. The fabrication and testing of a monolithic integrated prototype in RF-MEMS technology from ITC-irst is currently underway.
@article{arxiv.0802.3088,
title = {A Reconfigurable Impedance Matching Network Employing RF-MEMS Switches},
author = {M. Bedani and F. Carozza and R. Gaddi and A. Gnudi and B. Margesin and F. Giacomozzi},
journal= {arXiv preprint arXiv:0802.3088},
year = {2008}
}
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Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing)