A theoretical analysis of the charge sensitivity of the RF-SET is presented. We use the ``orthodox'' approach and consider the case when the carrier frequency is much less than I/e where I is the typical current through RF-SET. The optimized noise-limited sensitivity is determined by the temperature T, and at low T it is only 1.4 times less than the sensitivity of conventional single-electron transistor.
@article{arxiv.cond-mat/9902206,
title = {Charge sensitivity of radio frequency single-electron transistor (RF-SET)},
author = {Alexander N. Korotkov and Mikko A. Paalanen},
journal= {arXiv preprint arXiv:cond-mat/9902206},
year = {2016}
}