The operation of resistively-coupled single-electron transistor (R-SET) is studied quantitatively. Due to the Nyquist noise of the coupling resistance, degradation of the R-SET performance is considerable at temperatures T as small as 10−3e2/C (where C is the junction capacitance) while the voltage gain becomes impossible at T\agt10−2e2/C.
@article{arxiv.cond-mat/9803038,
title = {Theoretical analysis of the resistively-coupled single-electron transistor},
author = {A. N. Korotkov},
journal= {arXiv preprint arXiv:cond-mat/9803038},
year = {2009}
}