Using a classical equation of motion, dynamics of the phase is analyzed in the Inductive Single-Electron Transistor (L-SET) which is a promising new system suitable for quantum measurement with ultimate sensitivity and low back-action. In a regime of nonlinear dynamics, a shift of the oscillator resonant frequency is discovered which has a direct analogy to the switching of a dc-biased Josephson junction into voltage state. Results are reviewed for the predicted charge sensitivity, and it is shown that a performance challenging the best rf-SETs is foreseeable with the new device.
@article{arxiv.cond-mat/0406479,
title = {Dynamics of the Inductive Single-Electron Transistor},
author = {Mika A. Sillanpää and Leif Roschier and Pertti J. Hakonen},
journal= {arXiv preprint arXiv:cond-mat/0406479},
year = {2007}
}
Comments
4 pages, submitted to Proceedings of the Vth Rencontres de Moriond in Mesoscopic Physics