Nonequilibrium spin distribution in single-electron transistor

Alexander N. Korotkov; V. I. Safarov

doi:10.1103/PhysRevB.59.89

Nonequilibrium spin distribution in single-electron transistor

凝聚态物理 2009-10-31 v1

作者: Alexander N. Korotkov , V. I. Safarov

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摘要

Single-electron transistor with ferromagnetic outer electrodes and nonmagnetic island is studied theoretically. Nonequilibrium electron spin distribution in the island is caused by tunneling current. The dependencies of the magnetoresistance ratio $\delta$ on the bias and gate voltages show the dips which are directly related to the induced separation of Fermi levels for electrons with different spins. Inside a dip $\delta$ can become negative.

关键词

spintronics

引用

@article{arxiv.cond-mat/9804292,
  title  = {Nonequilibrium spin distribution in single-electron transistor},
  author = {Alexander N. Korotkov and V. I. Safarov},
  journal= {arXiv preprint arXiv:cond-mat/9804292},
  year   = {2009}
}

备注

11 pages, 2 eps figures

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