We study transport in ferromagnetic single-electron transistors. The non- equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances the tunnel magnetoresistance and has a drastic effect on the time- dependent transport properties. A transient decay of the spin accumulation may reverse the electric current on time scales of the order of the spin-flip relaxation time. This can be used as an experimental signature of the non- equilibrium spin accumulation.
@article{arxiv.cond-mat/9812224,
title = {Non-equilibrium spin accumulation in ferromagnetic single-electron transistors},
author = {Arne Brataas and Yu. V. Nazarov and J. Inoue and G. E. W. Bauer},
journal= {arXiv preprint arXiv:cond-mat/9812224},
year = {2009}
}
Comments
9 postscript figures, to appear in The European Physical Journal B