Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device
Abstract
We investigate the magneto-transport characteristics of nanospintronics single-electron devices. The devices consist of single non-magnetic nano-objects (nanometer size nanoparticles of Al or Cu) connected to Co ferromagnetic leads. The comparison with simulations allows us attribute the observed magnetoresistance to either spin accumulation or anisotropic magneto-Coulomb effect (AMC), two effects with very different origins. The fact that the two effects are observed in similar samples demonstrates that a careful analysis of Coulomb blockade and magnetoresistance behaviors is necessary in order to discriminate them in magnetic single-electron devices. As a tool for further studies, we propose a simple way to determine if spin transport or AMC effect dominates from the Coulomb blockade I-V curves of the spintronics device.
Keywords
Cite
@article{arxiv.1111.5430,
title = {Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device},
author = {A. Bernand-Mantel and P. Seneor and K. Bouzehouane and S. Fusil and C. Deranlot and F. Petroff and A. Fert},
journal= {arXiv preprint arXiv:1111.5430},
year = {2013}
}