相关论文: $\mu_\mathrm{2T}(n)$: A Method for Extracting the …
A large, strongly temperature-dependent Nernst coefficient, $\nu$, is observed between $T$ = 2 K and 300 K for CeCu$_2$Si$_2$ and Ce$_{0.8}$La$_{0.2}$Cu$_2$Si$_2$. The enhanced $\nu(T)$ is determined by the asymmetry of the on-site Kondo…
In studying compensated semimetals, the two-band model has proven extremely useful in capturing electrical conductivity under magnetic field, as a function of density and mobility of electron-like and hole-like carriers. However, it rarely…
In this paper we present a method to numerically study transverse Hall conductances using a two-terminal setup. Using nonlinear transport concepts we find that the Hall voltage dependence on the model parameters can be investigated from the…
Hall effect based magnetic field sensors are vector sensors which are sensitive to the perpendicular component of the magnetic field. Typically, Si-based Hall sensors are used for most usages requiring low field sensitivity. For higher…
We report on the fabrication and characterization of synthesized multiwall MoS2 nanotube (NT) and nanoribbon (NR) field-effect transistors (FETs). The MoS2 NTs and NRs were grown by chemical transport, using iodine as a transport agent.…
We propose a scheme where transport measurements of charge current and its noise can be used to determine the spin Hall conductance in a four-terminal setup. Starting from the scattering formalism we express the spin current and spin Hall…
We report an observation of metal-insulator transition in a thin film of SnSe$_2$. The room-temperature carrier concentration of SnSe$_2$ film was increased by electrostatic doping to 1.14$\times$ 10$^{13}$ cm$^{-2}$. A crossover from…
Motivated by interesting recent experimental results, we consider theoretically charged-impurity scattering-limited 2D electronic transport in (100), (110), and (111)-Si inversion layers at low temperatures and carrier densities, where…
We report the fabrication of ionic liquid (IL) gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron mobility about 60 cm2V-1s-1 at 250 K in ionic liquid gated…
The transport characteristics of a disordered MoS$_2$ nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The layered MoS$_2$ nanoflake is exfoliated from a bulk MoS$_2$ crystal and the conductance…
Carrier mobility in bulk semiconductors is typically governed by electron-phonon (e-ph) scattering. In nanostructures, spatial confinement can lead to significant surface scattering, lowering mobility and breaking the spatial homogeneity…
The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms responsible for limiting the mobility of single layer…
We report on theoretical studies of the recently discovered negative giant magnetoresistance in ultraclean two-dimensional electron systems at low temperatures. We adapt a transport model to a ultraclean scenario and calculate the elastic…
Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be…
Motivated by the experimental results of Willett et al [Phys.Rev. Lett., {\bf 78}, 4478 (1997)] we develop a magneto-transport theory for the response of a two dimensional electron gas (2DEG) in the Fractional Quantum Hall Regime near…
Physical systems with non-trivial topological order find direct applications in metrology[1] and promise future applications in quantum computing[2,3]. The quantum Hall effect derives from transverse conductance, quantized to unprecedented…
By applying the conventional two-liquid model to the magnetoresistivity tensor, we reveal a record-high carrier mobility for surface states in tetradymite topological insulators ($\sim$ 20000 cm$^2$/Vs) in both bulk crystals and thin flakes…
A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by…
We measure the low-field Hall resistivity of a magnetically-doped two-dimensional electron gas as a function of temperature and electrically-gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de…
Mobility is a key parameter for SnO2, which is extensively studied as a practical transparent oxide n-type semiconductor. In experiments, the mobility of electrons in bulk SnO2 single crystals varies from 70 to 260 cm2V-1s-1 at room…