相关论文: $\mu_\mathrm{2T}(n)$: A Method for Extracting the …
Two-dimensional (2D) semiconductors have demonstrated great potential for next-generation electronics and optoelectronics. However, the current 2D semiconductors suffer from intrinsically low carrier mobility at room temperature, which…
We introduce a two-fluid mobility model incorporating fundamental aspects of electron-hole (e-h) scattering such as momentum conservation for simulating laser-driven semiconductor switches (LDSSs). Compared to previous works that use…
We report density-functional theory (DFT), atomistic simulations of the non-equilibrium transport properties of carbon nanotube (CNT) field-effect transistors (FETs). Results have been obtained within a self-consistent approach based on the…
The magnetic sensitivity of Hall-effect sensors made of InAlN/GaN and AlGaN/GaN heterostructures was measured between room temperature and 576{\deg}C. Both devices showed decreasing voltage-scaled magnetic sensitivity at high temperature,…
A quantum spin Hall insulator is a two-dimensional state of matter consisting of an insulating bulk and one-dimensional helical edge states. While these edge states are topologically protected against elastic backscattering in the presence…
Interest in ZrTe5 has been reinvigorated in recent years owing to its potential for hosting versatile topological electronic states and intriguing experimental discoveries. However, the mechanism of many of its unusual transport behaviors…
Semiconductors are currently an active topic of study due to the endless range of applications in electronic hardware and computer engineering. In this experiment, the material properties (i.e. resistivity $\rho$, Hall coefficient $R_{H}$,…
Single-crystalline Bi2Te2Se nanoplates with thicknesses between 8 and 30 nm and lateral sizes of several micrometers were synthesized by a vapour-solid growth method. Angle-dependent magnetoconductance measurements on individual nanoplates…
We theoretically consider the temperature and density dependent transport properties of semiconductor-based 2D carrier systems within the RPA-Boltzmann transport theory, taking into account realistic screened charged impurity scattering in…
In this Letter, four-point magnetotransport of high mobility InGaAs/InP heterointerfaces is measured from 1.6 K to 300 K and from 0 to 15 T, and an analysis is shown whereby the mobility and density of the two-dimensional (2D) accumulation…
We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The…
We report magneto-transport measurements on high-mobility two-dimensional electron systems (2DESs) confined in In_0.75Ga_0.25As/In_0.75Al_0.25As single quantum wells. Several quantum Hall states are observed in a wide range of temperatures…
We extract the quantum conductance fluctuations and study its magnetic field dependence in the gate-dependent transport of the topological electrons in bulk-insulating BiSbTeSe2 devices. While increasing the magnetic field from 0 to 12…
We calculate magnetization in magnetically doped semiconductors assuming a local exchange model of carrier-mediated ferromagnetic mechanism and using a number of complementary theoretical approaches. In general, we find that the results of…
We analyze transport of magnetization in insulating systems described by a spin Hamiltonian. The magnetization current through a quasi one-dimensional magnetic wire of finite length suspended between two bulk magnets is determined by the…
This work examines the influence of thickness on the electrical transport properties of mechanically exfoliated two-dimensional SnSe$_2$ nanosheets, derived from the bulk single crystal. Contrary to conventional trend observed in…
We performed terahertz magneto-optical spectroscopy of FeSe thin film to elucidate the charge carrier dynamics. The measured diagonal (longitudinal) and off-diagonal (Hall) conductivity spectra are well reproduced by two-carrier Drude…
Motivated by recent breakthrough in molecular beam epitaxy of GaAs/AlGaAs quantum wells [Y. J. Chung \textit{et al.}, Nature Materials \textbf{20}, 632 (2021)], we examine contributions to mobility and quantum mobility from various…
We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, we have…
Accurate determination of carrier densities in ferromagnetic semiconductors by Hall measurements is hindered by the anomalous Hall effect, and thus alternative methods are being sought. Here, we propose that cyclotron resonance (CR) is an…