The transport characteristics of a disordered MoS2 nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The layered MoS2 nanoflake is exfoliated from a bulk MoS2 crystal and the conductance G and magnetoresistance are measured in a four-probe setup over a wide range of temperatures. At high temperatures, we observe that log10G exhibits a −T−1 temperature dependence and the transport in the nanoflake dominantly arises from thermal activation. At low temperatures, where the transport in the nanoflake dominantly takes place via variable-range hopping (VRH) processes, we observe that log10G exhibits a −T−1/3 temperature dependence, an evidence for the two-dimensional (2D) Mott VRH transport. The measured low-field magnetoresistance of the nanoflake in the insulator regime exhibits a quadratic magnetic field dependence ∼αB2 with α∼T−1, fully consistent with the 2D Mott VRH transport in the nanoflake.
@article{arxiv.1801.08932,
title = {Two-dimensional Mott variable-range hopping transport in a disordered MoS$_2$ nanoflake},
author = {Jianhong Xue and Shaoyun Huang and Ji-Yin Wang and H. Q. Xu},
journal= {arXiv preprint arXiv:1801.08932},
year = {2019}
}