We have studied temperature- and electric-field dependent carrier transport in single flakes of MoS2 treated with n-butyllithium. The temperature dependence of the four-terminal resistance follows the Efros-Shklovskii variable range hopping conduction mechanism. From measurements in the Ohmic and non-Ohmic regime, we estimate the localization length and the average hopping length of the carriers, as well as the effective dielectric constant. Furthermore, comparison between two- and four-probe measurements yield a contact resistance that increases significantly with decreasing temperature.
@article{arxiv.1801.05157,
title = {Efros-Shklovskii variable range hopping and nonlinear transport in 1T/1T$^{\prime}$-MoS$_{2}$},
author = {Nikos Papadopoulos and Gary A. Steele and Herre S. J. van der Zant},
journal= {arXiv preprint arXiv:1801.05157},
year = {2018}
}