相关论文: $\mu_\mathrm{2T}(n)$: A Method for Extracting the …

We investigate theoretically 2D electronic transport in Si:P $\delta$-doped layers limited by charged-dopant scattering. Since the carrier density is approximately equal to the dopant impurity density, the density dependent transport shows…

We report resistivity $\rho$ and Hall effect measurements on EuFe$_2$As$_2$ at ambient pressure and 28 kbar and magnetization measurements at ambient pressure. We analyze the temperature and magnetic-field dependence of $\rho$ and the Hall…

Carrier density and disorder are two crucial parameters that control the properties of correlated two-dimensional electron systems. In order to disentangle their individual contributions to quantum phenomena, independent tuning of these two…

The two-dimensional transition metal dichalcogenides (TMDs) have been proposed as candidates for the channel material in future field effect transistor designs. The heterophase design which utilizes the metallic T- or T' phase of the TMD as…

Gate-controllable two dimensional systems with in-plane modulation of properties could serve as highly tunable effective media. Intuitively, such systems may bring novel functionality provided that the period of the lateral modulation is…

We report the results of two fundamental transport measurements at a Landau level filling factor $\nu$ of 1/2. The well known ballistic electron transport phenomena of quenching of the Hall effect in a mesoscopic cross-junction and negative…

Two-dimensional electron systems (2DESs) confined to the surface of narrowband semiconductors have attracted great interest since they can easily integrate with superconductivity (or ferromagnetism) enabling new possibilities in hybrid…

Carrier transport in nanodevices plays a crucial role in determining their functionality. In the post-Moore era, the behavior of carriers near surface or interface domains the function of the whole devices. However, the femtosecond dynamics…

The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are…

Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the…

The temperature dependence of 2D magnetoresistance in an applied in-plane magnetic field is theoretically considered for electrons in Si MOSFETs within the screening theory for long-range charged impurity scattering limited carrier…

Recent measurements of the 2D Hall resistance show that the Hall coefficient is independent of the applied in-plane magnetic field, i.e., the spin-polarization of the system. We calculate the weak-field Hall coefficient and the…

Graphene enables precise carrier-density control via gating, making it an ideal platform for studying electronic interactions. However, sample inhomogeneities often limit access to the low-density regimes where these interactions dominate.…

We study the flux-flow Hall effect and thermomagnetic transport near the upper critical field \hctwo\ in extreme type-II superconductors starting from a suitable generalization of the time dependent Ginzburg-Landau equations. We explicitly…

We compute the spin-Hall conductance in a multiband model describing the two-dimensional electron gas formed at a LaAlO3/SrTiO3 interface in the presence of a finite concentration of impurities. Combining linear response theory with a…

Ambipolar transport is a commonly occurring theme in semimetals and semiconductors. Here we present an analytical formulation of the conductivity for a two-band system. Electron and hole carrier densities and their respective conductivities…

The transition-metal dichalcogenides have attracted a lot of attention as a possible stepping-stone toward atomically thin and flexible field-effect transistors. One key parameter to describe the charge transport is the time between two…

We present high field magnetotransport studies of Ge1-x-y(SnxMny)Te bulk multiferroics with diamagnetic Sn and paramagnetic Mn concentration x = 0.38 to 0.79 and y = 0.02 to 0.086, respectively. The zero field resistivity, {\rho}(T) takes…

We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the…

The mobility of charge carriers in a semiconductor nanowire is explored as a function of increasing radius, assuming low temperatures where impurity scattering dominates. The competition between increased cross-section and the concurrent…