Ballistic Composite Fermions in Semiconductor Nanostructures

J. E. F. Frost; C. -T. Liang; D. R. Mace; M. Y. Simmons; D. A. Ritchie; M. Pepper

doi:10.1103/PhysRevB.53.9602

Ballistic Composite Fermions in Semiconductor Nanostructures

凝聚态物理 2009-10-28 v1

作者: J. E. F. Frost , C. -T. Liang , D. R. Mace , M. Y. Simmons , D. A. Ritchie , M. Pepper

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摘要

We report the results of two fundamental transport measurements at a Landau level filling factor $\nu$ of 1/2. The well known ballistic electron transport phenomena of quenching of the Hall effect in a mesoscopic cross-junction and negative magnetoresistance of a constriction are observed close to B~=~0 and $\nu~=~ 1/2$ . The experimental results demonstrate semi-classical charge transport by composite fermions, which consist of electrons bound to an even number of flux quanta.

关键词

composite fermions in quantum hall effect quantum hall effect magnetoresistance

引用

@article{arxiv.cond-mat/9601063,
  title  = {Ballistic Composite Fermions in Semiconductor Nanostructures},
  author = {J. E. F. Frost and C. -T. Liang and D. R. Mace and M. Y. Simmons and D. A. Ritchie and M. Pepper},
  journal= {arXiv preprint arXiv:cond-mat/9601063},
  year   = {2009}
}

备注

9 pages TeX 3.1415 C version 6.1, 3 PostScript figures

Ballistic Composite Fermions in Semiconductor Nanostructures

摘要

关键词

引用

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