Hall coefficient and magnetoresistance of 2D spin-polarized electron systems
摘要
Recent measurements of the 2D Hall resistance show that the Hall coefficient is independent of the applied in-plane magnetic field, i.e., the spin-polarization of the system. We calculate the weak-field Hall coefficient and the magnetoresistance of a spin polarized 2D system using the semi-classical transport approach based on the screening theory. We solve the coupled kinetic equations of the two carrier system including electron-electron interaction. We find that the in-plane magnetic field dependence of the Hall coefficient is suppressed by the weakening of screening and the electron-electron interaction. However, the in-plane magnetoresistance is mostly determined by the change of the screening of the system, and can therefore be strongly field dependent.
引用
@article{arxiv.cond-mat/0601232,
title = {Hall coefficient and magnetoresistance of 2D spin-polarized electron systems},
author = {E. H. Hwang and S. Das Sarma},
journal= {arXiv preprint arXiv:cond-mat/0601232},
year = {2009}
}
备注
5 pages with 6 figures