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铁磁半导体GaMnAs中的磁阻与霍尔效应

材料科学 2009-11-07 v1

作者: K W Edmonds , R P Campion , K-Y Wang , A C Neumann , B L Gallagher , C T Foxon , P C Main

在 arXiv 上查看 ↗ PDF ↗ DOI ↗

摘要

presented for a series of具有0.015≤x≤0.08范围内的金属Ga1-xMnxAs薄膜的电阻率、温度和磁场依赖的异常霍尔效应。观察到异常霍尔电阻与电阻率呈二次函数关系，其大小与稀薄磁性半导体中异常霍尔效应的伯里相理论相吻合。

关键词

GaMnAs 磁阻霍尔效应异常霍尔效应伯里相铁磁半导体

引用

@article{arxiv.cond-mat/0209123,
  title  = {Magnetoresistance and Hall Effect in the Ferromagnetic Semiconductor GaMnAs},
  author = {K W Edmonds and R P Campion and K-Y Wang and A C Neumann and B L Gallagher and C T Foxon and P C Main},
  journal= {arXiv preprint arXiv:cond-mat/0209123},
  year   = {2009}
}

备注

3 pages, 4 figures, MMM conference proceedings