Precise quantization of anomalous Hall effect near zero magnetic field

A. J. Bestwick; E. J. Fox; Xufeng Kou; Lei Pan; Kang L. Wang; D. Goldhaber-Gordon

doi:10.1103/PhysRevLett.114.187201

Precise quantization of anomalous Hall effect near zero magnetic field

Mesoscale and Nanoscale Physics 2015-05-13 v2

Authors: A. J. Bestwick , E. J. Fox , Xufeng Kou , Lei Pan , Kang L. Wang , D. Goldhaber-Gordon

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Abstract

We report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in Hall resistance to within a part per 10,000 and longitudinal resistivity under 1 ohm per square, with chiral edge transport explicitly confirmed by non-local measurements. Deviations from this behavior are found to be caused by thermally-activated carriers, which can be eliminated by taking advantage of an unexpected magnetocaloric effect.

Keywords

anomalous hall effect quantum hall effect magnetoresistance

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@article{arxiv.1412.3189,
  title  = {Precise quantization of anomalous Hall effect near zero magnetic field},
  author = {A. J. Bestwick and E. J. Fox and Xufeng Kou and Lei Pan and Kang L. Wang and D. Goldhaber-Gordon},
  journal= {arXiv preprint arXiv:1412.3189},
  year   = {2015}
}

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5 pages, 4 figures, with 9 pages of supplementary information

Precise quantization of anomalous Hall effect near zero magnetic field

Abstract

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