磁性拓扑绝缘体中量子反常霍尔效应的实验观测
介观与纳米尺度物理
2016-05-31 v1
摘要
反常霍尔效应的量子化版本曾被预测发生在磁性拓扑绝缘体中，但其实验实现一直具有挑战性。在此，我们报告在磁性拓扑绝缘体 Cr 掺杂的 (Bi,Sb)2Te3 薄膜中观测到量子反常霍尔（QAH）效应。在零磁场下，栅极调谐的反常霍尔电阻达到预测的量子化值 h/e^2，同时纵向电阻显著下降。在强磁场下，纵向电阻消失，而霍尔电阻保持在量子化值。QAH 效应的实现可能推动低功耗电子器件的发展。
引用
@article{arxiv.1605.08829,
title = {Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator},
author = {Cui-Zu Chang and Jinsong Zhang and Xiao Feng and Jie Shen and Zuocheng Zhang and Minghua Guo and Kang Li and Yunbo Ou and Pang Wei and Li-Li Wang and Zhong-Qing Ji and Yang Feng and Shuaihua Ji and Xi Chen and Jinfeng Jia and Xi Dai and Zhong Fang and Shou-Cheng Zhang and Ke He and Yayu Wang and Li Lu and Xu-Cun Ma and Qi-Kun Xu},
journal= {arXiv preprint arXiv:1605.08829},
year = {2016}
}
备注
11 pages, 4 figures