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相关论文: Epitaxial graphene/Ge interfaces: a minireview

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The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as essential probing elements, but also give rise to an effective…

介观与纳米尺度物理 · 物理学 2012-05-14 Yanqing Wu , Vasili Perebeinos , Yu-ming Lin , Tony Low , Fengnian Xia , Phaedon Avouris

It is promising to apply quantum-mechanically confined graphene systems in field-effect transistors. High stability, superior performance, and large-scale integration are the main challenges facing the practical application of graphene…

介观与纳米尺度物理 · 物理学 2012-01-04 Liang Feng Huang , Zhi Zeng

Remote epitaxy relaxes the constraints of conventional epitaxy, to enable low defect density, chemically abrupt heterostructures and exfoliation of single crystalline membranes. However, definitive evidence for a true remote mechanism…

Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The…

Tunability of interfacial effects between two-dimensional (2D) crystals is crucial not only for understanding the intrinsic properties of each system, but also for designing electronic devices based on ultra-thin heterostructures. A…

The field of graphene research has developed rapidly since its first isolation by mechanical exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graphene is both a promising material for next-generation…

介观与纳米尺度物理 · 物理学 2014-07-09 Matthew Yankowitz , Jiamin Xue , Brian J. LeRoy

Two processes have been proposed to fabricate graphene/NiFe alloy interfaces for tunneling magnetoresistance devices. One is the transfer of graphene and the other is the evaporation of alloys onto graphene. The formation energy of a NiFe…

材料科学 · 物理学 2025-06-23 Naohiro Matsumoto , Ryusuke Endo , Mitsuharu Uemoto , Tomoya Ono

The buffer layer has been analysed by combined micro-Raman and micro-transmission experiments. The epitaxial graphene growth on the (0001) Si face of 6H-SiC substrates was tuned to get a mixed surface at the early stage of graphitization…

介观与纳米尺度物理 · 物理学 2012-12-07 A. Tiberj , J. R. Huntzinger , N. Camara , P. Godignon , J. Camassel

Graphene supported on a substrate in contact with water underpins a wide range of processes and technologies, yet its wettability remains controversial. Understanding how substrate charges and graphene's properties influence water…

化学物理 · 物理学 2025-11-11 Yongkang Wang , Yair Litman , Minhaeng Cho , Stephen Cox , Mischa Bonn

Graphene Oxide and reduced Graphene Oxide are intriguing materials for photonics and electronic devices both for intrinsic characteristics and as precursors for the synthesis of graphene. Whatever the application and the engineering…

All carbon electronics based on graphene has been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of semiconducting graphene. While chemical…

Two different points of view are available to understand the behavior of graphene at low energies. One is considering a large $N_F$ that makes graphene a semimetal, and another for small $N_F < 2.5$ that would make graphene a narrow gap…

强关联电子 · 物理学 2011-10-18 N. García , P. Esquinazi , A. A. Pasa

We investigate the growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The formation of local buffer layer domains are identified to be the…

Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a unique possibility to investigate its finer details by…

Classical molecular-dynamics simulations were carried out to study epitaxial growth of graphene on 6H-SiC(0001) substrate. It was found that there exists a threshold annealing temperature above which we observe formation of graphitic…

介观与纳米尺度物理 · 物理学 2012-02-23 N. Jakse , R. Arifin , S. K. Lai

MXene-based heterostructures have received considerable interest owing to their unique properties. Herein, we examine various heterostructures of a prototypical MXene and graphene using density functional theory. We find that the adhesion…

介观与纳米尺度物理 · 物理学 2019-02-27 Rui Li , Weiwei Sun , Cheng Zhan , Paul R. C. Kent , De-en Jiang

The active photonics based on the two-dimensional material graphene has attracted enormous interests for developing the tunable and compact optical devices with high efficiency. Here we integrate graphene into the Fano-resonant…

光学 · 物理学 2019-07-17 Shuyuan Xiao , Tingting Liu , Chaobiao Zhou , Xiaoyun Jiang , Le Cheng , Yuebo Liu , Zhong Li

Despite that going deep has proven successful in many neural architectures, the existing graph transformers are relatively shallow. In this work, we explore whether more layers are beneficial to graph transformers, and find that current…

机器学习 · 计算机科学 2023-03-02 Haiteng Zhao , Shuming Ma , Dongdong Zhang , Zhi-Hong Deng , Furu Wei

We present a theoretical analysis of the proximity effect at a graphene-superconductor interface. We use a tight-binding model for the electronic states in this system which allows to describe the interface at the microscopic level. Two…

介观与纳米尺度物理 · 物理学 2009-11-13 P. Burset , A. L. Yeyati , A. Martín-Rodero

The growth of graphene by catalytic decomposition of ethylene on Cu(111) in an ultra-high vacuum system was investigated with low energy electron diffraction, low energy electron microscopy, and atomic force microscopy. Attempts to form a…

材料科学 · 物理学 2013-07-19 Zachary R. Robinson , Parul Tyagi , Tyler R. Mowll , James B. Hannon , Carl A. Ventrice
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