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相关论文: Epitaxial graphene/Ge interfaces: a minireview

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The isolation of graphene has triggered an avalanche of studies into the spin-dependent physical properties of this material, as well as graphene-based spintronic devices. Here we review the experimental and theoretical state-of-art…

介观与纳米尺度物理 · 物理学 2015-03-11 Wei Han , Roland K. Kawakami , Martin Gmitra , Jaroslav Fabian

Confinement epitaxy beneath graphene stabilizes exotic material phases by restricting vertical growth and altering lateral diffusion, conditions unattainable on bare substrates. However, achieving long-range interfacial order while…

介观与纳米尺度物理 · 物理学 2026-02-19 Zamin Mamiyev , Niclas Tilgner , Narmina O. Balayeva , Dietrich R. T. Zahn , Thomas Seyller , Christoph Tegenkamp

Graphene has shown great application opportunities in future nanoelectronic devices due to its outstanding electronic properties. Moreover, its impressive optical properties have been attracting the interest of researchers, and, recently,…

A systematic treatment of graphene-semiconductor junction is presented. Finite density of states at the Fermi level of graphene leads to exotic electronic properties at graphene-semiconductor interface. Quite generally, the Schottky-Mott…

应用物理 · 物理学 2020-04-28 M. Javadi

Ballistic semiconductor structures have allowed the realization of optics-like phenomena in electronics, including magnetic focusing and lensing. An extension that appears unique to graphene is to use both n and p carrier types to create…

介观与纳米尺度物理 · 物理学 2011-04-27 J. R. Williams , Tony Low , M. S. Lundstrom , C. M. Marcus

Electronic devices based on graphene technology are catching on rapidly and the ability to engineer graphene properties at the nanoscale is becoming, more than ever, indispensable. Here, we present a new procedure of graphene…

介观与纳米尺度物理 · 物理学 2016-09-07 A. Stöhr , S. Forti , S. Link , A. A. Zakharov , K. Kern , U. Starke , H. M. Benia

This paper provides an overview on graphene solution-gated field effect transistors (SGFETs) and their applications in bioelectronics. The fabrication and characterization of arrays of graphene SGFETs is presented and discussed with respect…

材料科学 · 物理学 2013-06-10 Lucas H. Hess , Max Seifert , Jose A. Garrido

Graphene exhibits unconventional two-dimensional electronic properties resulting from the symmetry of its quasiparticles, which leads to the concepts of pseudospin and electronic chirality. Here we report that scanning tunneling microscopy…

材料科学 · 物理学 2009-11-13 I. Brihuega , P. Mallet , C. Bena , S. Bose , C. Michaelis , L. Vitali , F. Varchon , L. Magaud , K. Kern , J. Y. Veuillen

Intercalation of epitaxial graphene on SiC(0001) with Sn results in a well-ordered Sn $(1\times1)$ structure on the SiC surface with quasi-freestanding graphene on top. While the electronic properties of the individual layers have been…

Patterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbide by the deposition of a 120 nm to 150nm-thick silicon…

We perform density functional theory calculations for the determination of the structural and electronic properties of epitaxial graphene on 4H-SiC(000$\bar{1}$). Using commensurate supercells that minimize non-physical stresses we show…

介观与纳米尺度物理 · 物理学 2011-03-07 I. Deretzis , A. La Magna

Intercalation has proven to be a powerful tool for tailoring the electronic properties of freestanding graphene layers as well as for stabilizing the intercalated material in a two-dimensional configuration. This work examines Si…

Graphene conductive properties have been long exploited in the field of organic photovoltaics and optoelectronics by the scientific community worldwide. We engineered and characterized a hybrid biointerface in which graphene is coupled with…

Graphene, a two-dimensional (2D) material with unique electronic properties, appears to be an ideal object for the application of surface-science methods. Among them, a family of scanning probe microscopy methods (STM, AFM, KPFM) and the…

材料科学 · 物理学 2015-03-30 Yuriy Dedkov , Elena Voloshina , Mikhail Fonin

Graphene serves as an ideal platform to investigate the microscopic structure and reaction kinetics at the graphitic electrode interfaces. However, graphene is susceptible to various extrinsic factors, e.g. substrate, causing much confusion…

化学物理 · 物理学 2022-07-19 Ying Xu , You-Bo Ma , Feng Gu , Shan-Shan Yang , Chuan-Shan Tian

Graphite surfaces interact weakly with molecules compared to other conducting surfaces bringing the molecule-molecule interaction to the foreground. C$_{60}$ on highly oriented pyrolytic graphite is a model system for studying the molecular…

介观与纳米尺度物理 · 物理学 2019-11-25 E. Seydel , R. Hoffmann-Vogel , M. Marz

Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000…

Understanding and predicting interface diffusion phenomena in materials is crucial for various industrial applications, including semiconductor manufacturing, battery technology, and catalysis. In this study, we propose a novel approach…

材料科学 · 物理学 2025-01-13 Zirui Zhao , Hai-Feng Li

Semimetals are being explored for their unique advantages in low-energy high-speed photodetection, although they suffer from serious drawbacks such as an intrinsically high dark current. In this perspective, we envision the exploitation of…

应用物理 · 物理学 2021-12-22 Jing Liu , Fengnian Xia , Di Xiao , Javier García de Abajo , Dong Sun

Metal/graphene interfaces generated by electrode deposition induce barriers or potential modulations influencing the electronic transport properties of graphene based devices. However, their impact on the local mechanical properties of…

介观与纳米尺度物理 · 物理学 2014-02-21 Zoltán Osváth , François Lefloch , Vincent Bouchiat , Claude Chapelier