相关论文: Parallel field magnetoresistance in topological in…
We explore the temperature dependent magnetoresistance of bulk insulating topological insulator thin films. Thin films of Bi2Se2Te and BiSbTeSe1.6 were grown using Pulsed Laser Deposition technique and subjected to transport measurements.…
Topological insulators are insulating in the bulk but possess spin-momentum locked metallic surface states protected by time-reversal symmetry. The existence of these surface states has been confirmed by angle-resolved photoemission…
Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI…
The Dirac-like surface states of the topological insulators (TIs) are protected by time reversal symmetry (TRS) and exhibit a host of novel properties. Introducing magnetism into TI, which breaks the TRS, is expected to create exotic…
We propose that the topological magneto-electric (ME) effect, a hallmark of topological insulators (TIs), can be realized in thin films of TIs in the $\nu=0$ quantum Hall state under magnetic field or by doping two magnetic ions with…
Topological insulator (TI) materials such as Bi2Te3 and Bi2Se3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based device applications. In this work, structural and…
It is well-known that helical surface states of a three-dimensional topological insulator (TI) do not respond to a static in-plane magnetic field. Formally this occurs because the in-plane magnetic field appears as a vector potential in the…
We report on the magneto-transport properties of chemical vapor deposition grown films of interconnected Bi2Te3 nanoplates. Similar to many other topological insulator (TI) materials, these granular Bi2Te3 films exhibit a linear…
Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of…
Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However,…
Intrinsic magnetic topological insulator (TI) is a stoichiometric magnetic compound possessing both inherent magnetic order and topological electronic states. Such a material can provide a shortcut to various novel topological quantum…
We present a new method to obtain topological insulator Bi$_2$Se$_3$ thin films with a centimeter large lateral length. To produce amorphous Bi$_2$Se$_3$ thin films we have used a sequential flash-evaporation method at room temperature.…
We report that thin films of a prototype topological insulator, Bi$_{2}$Se$_{3}$, can be epitaxially grown onto the (0001) surface of BaFe$_{12}$O$_{19}$(BaM), a magnetic insulator with high Curie temperature and large perpendicular…
SmB6 has been predicted and verified as a prototype of topological Kondo insulators (TKIs). Here we report longitudinal magnetoresistance and Hall coefficient measurements on co-sputtered nanocrystalline SmB6 films and try to find possible…
Topological insulators are immensely investigated for their surface states related properties as these materials can be used for various spintronics, quantum computing, and optoelectronics applications. In this perspective, different…
We show that a thin film of a three-dimensional topological insulator such as Bi$_2$Se$_3$ or Bi$_2$Te$_3$ can exhibit strong linear and nonlinear magneto-optical effects in a transverse magnetic field. In particular, one can achieve an…
Recent measurements of the magnetoresistance (MR) of amorphous superconducting thin films in tilted magnetic fields have displayed several surprising experimental details, in particular a strong dependence of the MR on field angle at low…
The response of thin films of Bi$_2$Se$_3$ to a strong perpendicular magnetic field is investigated by performing magnetic bandstructure calculations for a realistic multi-band tight-binding model. Several crucial features of Landau…
Through a thorough magneto-transport study of antiferromagnetic topological insulator MnBi2Te4 (MBT) thick films, a positive linear magnetoresistance (LMR) with a two-dimensional (2D) character is found in high perpendicular magnetic fields…
In this work we study the spin accumulation due to an in-plane electric field in an asymmetric topological insulator (TI) thin film system with an out of plane magnetic field and an in-plane magnetization. A TI thin film differs from the…