相关论文: Position Modulation Code for Rewriting Write-Once …
We propose a new Write-Once-Memory (WOM) coding scheme based on source polarization. By applying a source polarization transformation on the to-be-determined codeword, the proposed WOM coding scheme encodes information into the bits in the…
In this paper, we propose a construction of non-binary WOM (Write-Once-Memory) codes for WOM storages such as flash memories. The WOM codes discussed in this paper are fixed rate WOM codes where messages in a fixed alphabet of size $M$ can…
Flash memory is a write-once medium in which reprogramming cells requires first erasing the block that contains them. The lifetime of the flash is a function of the number of block erasures and can be as small as several thousands. To…
The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer…
This paper constructs WOM codes that combine rewriting and error correction for mitigating the reliability and the endurance problems in flash memory. We consider a rewriting model that is of practical interest to flash applications where…
A coding scheme for write once memory (WOM) using polar codes is presented. It is shown that the scheme achieves the capacity region of noiseless WOMs when an arbitrary number of multiple writes is permitted. The encoding and decoding…
Write-Once-Memory (WOM) is a model for many modern non-volatile memories, such as flash memories. Recently, several capacity-achieving WOM coding schemes have been proposed based on polar coding. Due to the fact that practical computer…
This paper investigates the design and application of write-once memory (WOM) codes for flash memory storage. Using ideas from Merkx ('84), we present a construction of WOM codes based on finite Euclidean geometries over $\mathbb{F}_2$.…
In the framework of write-once memory (WOM) codes, it is important to distinguish between codes that can be decoded directly and those that require that the decoder knows the current generation to successfully decode the state of the…
In this paper we give several new constructions of WOM codes. The novelty in our constructions is the use of the so called Wozencraft ensemble of linear codes. Specifically, we obtain the following results. We give an explicit construction…
Phase Change Memory (PCM) has rapidly progressed and surpassed Dynamic Random-Access Memory (DRAM) in terms of scalability and standby energy efficiency. Altering a PCM cell's state during writes demands substantial energy, posing a…
\emph{Resistive memories}, such as \emph{phase change memories} and \emph{resistive random access memories} have attracted significant attention in recent years due to their better scalability, speed, rewritability, and yet non-volatility.…
In recent years, due to the spread of multi-level non-volatile memories (NVM), $q$-ary write-once memories (WOM) codes have been extensively studied. By using WOM codes, it is possible to rewrite NVMs $t$ times before erasing the cells. The…
Phase-change memory (PCM) is a promising non-volatile solid-state memory technology. A PCM cell stores data by using its amorphous and crystalline states. The cell changes between these two states using high temperature. However, since the…
Assuming we are in a Word-RAM model with word size $w$, we show that we can construct in $o(w)$ time an error correcting code with a constant relative positive distance that maps numbers of $w$ bits into $\Theta(w)$-bit numbers, and such…
Reducing the threshold voltage of electronic devices increases their sensitivity to electromagnetic radiation dramatically, increasing the probability of changing the memory cells' content. Designers mitigate failures using techniques such…
Flash memories intended for SSD and mobile applications need to provide high random I/O performance. This requires using efficient schemes for reading small chunks of data (e.g. 0.5KB - 4KB) from random addresses. Furthermore, in order to…
Flash memory is a non-volatile computer memory comprising blocks of cells, wherein each cell can take on q different values or levels. While increasing the cell level is easy, reducing the level of a cell can be accomplished only by erasing…
A rewriting code construction for flash memories based upon lattices is described. The values stored in flash cells correspond to lattice points. This construction encodes information to lattice points in such a way that data can be written…
In this paper, we propose novel modulation concepts that we call weak composition modulation (WCM) and composition modulation (CM). We use weak and strict compositions of an integer to form codewords of WCM and CM, respectively. For the…