相关论文: Position Modulation Code for Rewriting Write-Once …

In this work, we study a recently proposed direct shaping code for flash memory. This rate-1 code is designed to reduce the wear for SLC (one bit per cell) flash by minimizing the average fraction of programmed cells when storing structured…

Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for…

The memory model for RISC-V, a newly developed open source ISA, has not been finalized yet and thus, offers an opportunity to evaluate existing memory models. We believe RISC-V should not adopt the memory models of POWER or ARM, because…

A prominent characteristic of write operation in Phase-Change Memory (PCM) is that its latency and energy are sensitive to the data to be written as well as the content that is overwritten. We observe that overwriting unknown memory content…

The development process of microcontroller firmware often involves multiple parties. In such a scenario, the Intellectual Property (IP) is not protected against adversarial developers which have unrestricted access to the firmware binary.…

In the context of asynchronous concurrent shared-memory systems, a snapshot algorithm allows failure-prone processes to concurrently and atomically write on the entries of a shared array MEM , and also atomically read the whole array.…

In this paper, we explore worst-case solutions for the problems of single and multiple matching on strings in the word RAM model with word length w. In the first problem, we have to build a data structure based on a pattern p of length m…

As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…

Rank modulation has been recently proposed as a scheme for storing information in flash memories. While rank modulation has advantages in improving write speed and endurance, the current encoding approach is based on the "push to the top"…

Rank modulation is a way of encoding information to correct errors in flash memory devices as well as impulse noise in transmission lines. Modeling rank modulation involves construction of packings of the space of permutations equipped with…

Processing in memory (PiM) represents a promising computing paradigm to enhance performance of numerous data-intensive applications. Variants performing computing directly in emerging nonvolatile memories can deliver very high energy…

Recently, flash memories have become a competitive solution for mass storage. The flash memories have rather different properties compared with the rotary hard drives. That is, the writing of flash memories is constrained, and flash…

Write-Only Oblivious RAM (WoORAM) protocols provide privacy by encrypting the contents of data and also hiding the pattern of write operations over that data. WoORAMs provide better privacy than plain encryption and better performance than…

In order to achieve fault tolerance, highly reliable system often require the ability to detect errors as soon as they occur and prevent the speared of erroneous information throughout the system. Thus, the need for codes capable of…

We present a construction of one-time memories (OTMs) using classical-accessible stateless hardware, building upon the work of Broadbent et al. and Behera et al.. Unlike the aforementioned work, our approach leverages quantum random access…

We propose locally rewritable codes (LWC) for resistive memories inspired by locally repairable codes (LRC) for distributed storage systems. Small values of repair locality of LRC enable fast repair of a single failed node since the lost…

In data storage and data transmission, certain patterns are more likely to be subject to error when written (transmitted) onto the media. In magnetic recording systems with binary data and bipolar non-return-to-zero signaling, patterns that…

Modern processors deploy a variety of weak memory models, which for efficiency reasons may execute instructions in an order different to that specified by the program text. The consequences of instruction reordering can be complex and…

We consider the local rank-modulation scheme in which a sliding window going over a sequence of real-valued variables induces a sequence of permutations. The local rank-modulation, as a generalization of the rank-modulation scheme, has been…

To mitigate the impact of noise and interference on multi-level-cell (MLC) flash memory with the use of low-density parity-check (LDPC) codes, we propose a dynamic write-voltage design scheme considering the asymmetric property of raw bit…