Highly-ordered graphene for two dimensional electronics
材料科学
2009-11-11 v1
摘要
With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial graphene sheets on a semiconductor. In this paper we show that graphene grown from the SiC (C-terminated) surface are of higher quality than those previously grown on SiC(0001). Graphene grown on the C-face can have structural domain sizes more than three times larger than those grown on the Si-face while at the same time reducing SiC substrate disorder from sublimation by an order of magnitude.
引用
@article{arxiv.cond-mat/0604206,
title = {Highly-ordered graphene for two dimensional electronics},
author = {J. Hass and C. A. Jeffrey and R. Feng and T. Li and X. Li and Z. Song and C. Berger and W. A. de Heer and P. N. First and E. H. Conrad},
journal= {arXiv preprint arXiv:cond-mat/0604206},
year = {2009}
}
备注
Submitted to Appl. Phys. Lett