一维弹道可重构晶体管的漏极电流模型
介观与纳米尺度物理
2019-08-07 v2
摘要
基于 WKB 近似,针对具有肖特基势垒接触的一维弹道多栅可重构场效应晶体管 (RFETs),考虑电子与空穴的带间隧穿,建立了漏极电流的简单模型。通过对费米-狄拉克分布函数与透射概率的适当近似,可获得 Landauer 积分的解析解。基于电流积分的数值积分,对双栅与三栅 RFETs 进行了对比分析。
引用
@article{arxiv.1907.10495,
title = {Drain Current Model of One-Dimensional Ballistic Reconfigurable Transistors},
author = {Igor Bejenari},
journal= {arXiv preprint arXiv:1907.10495},
year = {2019}
}
备注
6 pages, 3 figures. This article provides original results, although it contains a certain amount of text reused from arXiv:1703.05092. The relationship between these works includes the similar motivation, model limitation, approximation of the electron distribution, and importance of findings