相关论文: Drain Current Model of One-Dimensional Ballistic R…

A new analytical model based on the WKB approximation for MOSFET-like one-dimensional ballistic transistors with Schottky-Barrier contacts has been developed for the drain current. By using a proper approximation of both the Fermi-Dirac…

The potential barrier height at the interface formed by a metal contact and multiple one-dimensional (1D) quasi-ballistic channels in field-effect transistors (FETs) is evaluated across different carbon nanotube and nanowire device…

We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in the programgate at drain (PGAD) and program-gate at source (PGAS) configurations. To this end, dual-gate silicon nanowire (SiNW) FETs are fabricated…

We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer…

In this work, we describe the charge transport in two-dimensional (2D) Schottky barrier field-effect transistors (SB-FETs) based on the carrier injection at the Schottky contacts. We first develop a numerical model for thermionic and…

We present detailed simulations addressing recent electronic interference experiments, where a metallic gate is used to locally modify the Fermi wave-length of the charge carriers. Our numerical calculations are based on a solution of the…

In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials. The model integrates the 'conventional' model for SB-FETs…

Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can match the Pao-Sah model for standard silicon-based…

A low complexity computational model of the current-voltage characteristics for graphene nano-ribbon (GNR) field effect transistors (FET), able to simulate a hundred of points in few seconds using a PC, is presented. For quantum capacitance…

Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often…

A new Schottky-gate Bipolar Mode Field Effect Transistor (SBMFET) is proposed and verified by two-dimensional simulation. Unlike in the case of conventional BMFET, which uses deep diffused p+-regions as the gate, the proposed device uses…

Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…

In this paper, we present experimental results and simulation data of an electrostatically doped and therefore voltage-programmable, planar, CMOS-compatible field-effect transistor (FET) structure. This planar device is based on our…

A general nonperturbative theory of the low-energy electron propagator is developed and used to calculate the single-particle density of states in a variety of systems. This method involves the decoupling of the electron-electron…

We generalize Landauer's theory of ballistic transport in a one-dimensional (1D) conductor to situations where charge carrier injection and extraction are not any more confined to electrodes at either end of the channel, but may occur along…

Desirably, the world relies on the devices being compact, as they could drive to the increased functionality of integrated circuits at the provided footstep, that is becoming more reliable. To reduce the scalability over the devices,…

We present a quasi-analytical model for Tunnel Field Effect Transistors (TFETs) that includes the microscopic physics and chemistry of interfaces and non-idealities. The ballistic band-to-band tunneling current is calculated by modifying…

This article reports on tunable electron backscattering investigated with the biased tip of a scanning force microscope. Using a channel defined by a pair of Schottky gates, the branched electron flow of ballistic electrons injected from a…

We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The…

In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…