相关论文: Drain Current Model of One-Dimensional Ballistic R…
Voltage doubler rectifiers are usually applied to systems with high voltage and low current requirement. An X band voltage doubler rectifier has been developed with 72% conversion efficiency. To the best of our knowledge, the obtained…
We have found solution to a model of tunneling between a multi-channel Fermi liquid reservoir and an edge of the principal fractional quantum Hall liquid (FQHL) in the strong coupling limit. The solution explains how the absence of the…
As transistor footprint scales down to sub-10 nm regime, the process development for advancing to further technology nodes has encountered slowdowns. Achieving greater functionality within a single chip requires concurrent development at…
Ternary quantum information processing in superconducting devices poses a promising alternative to its more popular binary counterpart through larger, more connected computational spaces and proposed advantages in quantum simulation and…
The traditional transmission coefficient present in the original Landauer formulation, which is valid for quasi-static scenarios with working frequencies below the inverse of the electron transit time, is substituted by a novel…
An inherent difficulty in studying mesoscopic effects in semiconductor--superconductor hybrid structures is the large Schottky barrier which often forms at the interface. A large technological effort has been invested in in improving the…
We consider conductance mapping of systems based on the two-dimensional electron gas with scanning gate microscopy using two and more tips of the atomic force microscope. The paper contains results of numerical simulations for a model tip…
We analyze the behavior of the superconducting-fluctuations contribution to diamagnetism and conductivity in a model system having current-current interactions. We show that in proximity to a Mott-insulating phase one recovers an overall…
We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few…
An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for…
We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension to a ballistic model (J. Appl.…
We develop a phase-space ab-initio formalism to compute Ballistic Electron Emission Spectroscopy current-voltage I(V)'s in a metal-semiconductor interface. We consider injection of electrons into the conduction band for direct bias ($V>0$)…
We consider tunneling of spinless electrons from a single channel emitter into an empty collector through an interacting resonant level of the quantum dot (QD). When all Coulomb screening of sudden charge variations of the dot during the…
In this letter, we present a kilovolt-class \b{eta}-Ga2O3 vertical trench Schottky barrier diode with a field plate incorporating narrow fin width (Wfin) structures of sub-micron dimensions. We used a nanolaminate dielectric comprising a…
We study low-dimensional quantum systems with analytical and computational methods. Firstly, the one-dimensional extended $t$-$V$ model of fermions with interactions of a finite range is investigated. The model exhibits a phase transition…
We propose an extension of the Landauer-Buttiker scattering theory to include effects of interaction in the active region of a mesoscopic conductor structure. The current expression obtained coincides with those derived by different…
Unprecedented control over the manufacture of electronic devices on nanometer scale has allowed to perform highly controllable and fine-tuned experiments in the quantum regime where exotic effects can nowadays be measured. In quantum dot…
Periodic driving of quantum dots is analyzed as a basis for developing dynamic switching devices. We study transport through periodically modulated energy levels which are coupled to leads via tunneling coefficients. Utilizing Floquet…
Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a…
In a mesoscopic conductor electric resistance is detected even if the device is defect-free. We engineer and study a cold-atom analog of a mesoscopic conductor. It consists of a narrow channel connecting two macroscopic reservoirs of…