Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors
Mesoscale and Nanoscale Physics
2018-09-03 v3
Abstract
We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension to a ballistic model (J. Appl. Phys. 76, 4879 (1994)) and includes transmission probability and the drain-channel coupling capacitor. The latter parameter gives rise to a theoretical RON that is significantly larger than those predicted previously. To validate our model, we fabricated n-channel MOSFETs with varying channel lengths. We show the length dependence of these parameters to support a quasi-ballistic description of our devices.
Cite
@article{arxiv.1803.07920,
title = {Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors},
author = {Ramya Cuduvally and Prathamesh Dhakras and Phung Nguyen and Harold L. Hughes and Ji Ung Lee},
journal= {arXiv preprint arXiv:1803.07920},
year = {2018}
}