相关论文: Drain Voltage Scaling in Carbon Nanotube Transisto…

We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is…

Most carbon nanotube field-effect transistors (CNTFETs) directly attach metal source/drain contacts to an intrinsic nanotube channel. When the gate oxide thickness is reduced, such transistors display strong ambipolar conduction, even when…

State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However,…

With decreasing device dimensions, the performance of carbon nanotube field-effect transistors (CNFETs) is limited by high Off currents except at low drain voltages. We show that an asymmetric design improves the performance, reducing Off…

High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped…

We show that carbon nanotube transistors exhibit scaling that is qualitatively different than conventional transistors. The performance depends in an unexpected way on both the thickness and the dielectric constant of the gate oxide.…

We have fabricated carbon nanotube (CN) field-effect transistors with multiple, individually addressable gate segments. The devices exhibit markedly different transistor characteristics when switched using gate segments controlling the…

By developing a two-dimensional (2D) full quantum simulation, the attributes of carbon nanotube field-effect transistors (CNTFETs) in different temperatures have been comprehensively investigated. Simulations have been performed by…

Choosing a suitable doping level of channel relevant to channel diameter is considered for determining the carbon nanotube field effect transistors' performance which seem to be the best substitute of current transistor technology. For low…

As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport…

We report on a new computational model to efficiently simulate carbon nanotubebased field effect transistors (CNT-FET). In the model, a central region is formed by a semiconducting nanotube that acts as the conducting channel, surrounded by…

Short channel (~80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-k gate dielectrics (ALD HfO2) are obtained. For nanotubes with diameter ~ 1.6 nm…

In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…

Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last 4 decades. However, scaling channel lengths beyond 10 nm has become exceptionally challenging due to the direct tunneling between source and…

We present a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) including contact resistance, direct source-to-drain and band-to-band tunneling currents. The model captures the effects of dimensional…

Carbon Nanotube (CNT) is one of the most significant materials for the development of faster and improved performance of nano-scaled transistors. This paper aims at analyzing a trade-off between device performance and device size of CNT…

High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to…

Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured…

We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs) from 2 {\mu}m down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident…

The sensitive conductance change of semiconductor nanowires and carbon nanotubes in response to binding of charged molecules provide a novel sensing modality which is generally denoted as nanoFET sensors. In this paper, we study the scaling…