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When the atomic layers in a non-centrosymmetric van der Waals structure slide against each other, the interfacial charge transfer results in a reversal of the structures spontaneous polarization. This phenomenon is known as sliding…

In reduced-dimensional semiconductors, doping-induced carrier plasmons can strongly couple with quasiparticle excitations, leading to a significant band gap renormalization. We develop a new plasmon-pole theory that efficiently and…

介观与纳米尺度物理 · 物理学 2015-02-11 Yufeng Liang , Li Yang

We develop a theoretical model for how organic molecules can control the electronic and transport properties of an underlying transistor channel to whose surface they are chemically bonded. The influence arises from a combination of…

介观与纳米尺度物理 · 物理学 2015-05-13 Smitha Vasudevan , Neeti Kapur , Tao He , Matthew Neurock , James M. Tour , Avik W. Ghosh

Atomically thin transition metal dichalcogenides have emerged as promising candidates for sensitive photodetection. Here, we report a photoconductivity study of biased mono- and bilayer molybdenum disulfide field-effect transistors. We…

介观与纳米尺度物理 · 物理学 2014-10-14 Marco M. Furchi , Dmitry K. Polyushkin , Andreas Pospischil , Thomas Mueller

Defects in two-dimensional (2D) semiconductors play a decisive role in determining their electronic, optical, catalytic and quantum properties. Understanding how defect energy levels respond to variations in layer thickness is essential for…

材料科学 · 物理学 2026-04-08 Nikhilesh Maity , Shibu Meher , Manoj Dey , Abhishek Kumar Singh

Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes…

Two-dimensional (2D) semiconducting transition metal dichalcogenides such as MoS$_2$ have attracted extensive research interests for potential applications in optoelectronics, spintronics, photovoltaics, and catalysis. To harness the…

材料科学 · 物理学 2020-07-01 Anne Marie Z. Tan , Christoph Freysoldt , Richard G. Hennig

Photoluminescence (PL) of transition metal dichalcogenide (TMD) monolayers is strongly influenced by the dielectric environment. The defect states present in the substrate induces uncontrollable doping in the TMD monolayer and thereby…

We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30-60 cm2/Vs, relatively…

介观与纳米尺度物理 · 物理学 2015-06-12 Wenzhong Bao , Xinghan Cai , Dohun Kim , Karthik Sridhara , Michael S. Fuhrer

Strain engineering in single-layer semiconducting transition metal dichalcogenides aims to tune their bandgap energy and to modify their optoelectronic properties by the application of external strain. In this paper we study transition…

Scalable methods for improving the performance and stability of a field-effect transistor (FET) based on two-dimensional materials are crucial for its real applications. A scalable method of encapsulating the exfoliated MoS$ _{2} $ on SiO$…

材料科学 · 物理学 2024-03-12 Santu Prasad Jana , Shivangi , Suraina Gupta , Anjan K. Gupta

Janus MoSSe monolayers were recently synthesised by replacing S by Se on one side of MoS$_2$ (or vice versa for MoSe$_2$). Due to the different electronegativity of S and Se these structures carry a finite out-of-plane dipole moment. As we…

材料科学 · 物理学 2018-10-02 Anders C. Riis-Jensen , Mohnish Pandey , Kristian S. Thygesen

Atomically thin, single-crystalline transition metal dichalcogenides (TMDCs) grown via chemical vapor deposition (CVD) on sapphire substrates exhibit exceptional mechanical and electrical properties, positioning them as excellent channel…

Despite the highly porous nature with significantly large surface area, metal organic frameworks (MOFs) can be hardly used in electronic, and optoelectronic devices due to their extremely poor electrical conductivity. Therefore, the study…

Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional (2D) transition metal…

The search for a two-dimensional material that simultaneously fulfills some properties for its use in spintronics and optoelectronics, i.e., a suitable bandgap with high in-plane carrier mobility and good environmental stability, is the…

材料科学 · 物理学 2023-10-05 I. Arias-Camacho , A. M León , J. Mejía-Lopez

Thicknesses-dependent performances of metal-multilayered semiconductor junctions have attracted increasing attention, but till present, the mechanism of interaction and the resulting charge distribution at interfaces which control the…

材料科学 · 物理学 2019-10-30 Qian Wang , Yangfan Shao , Xingqiang Shi

The layered transition metal dichalcogenides (TMDs) have attracted considerable interest due to their unique electronic and optical properties. Here we report electric field induced strong electroluminescence in multi-layer MoS2 and WSe2.…

介观与纳米尺度物理 · 物理学 2015-10-20 Dehui Li , Rui Cheng , Hailong Zhou , Chen Wang , Anxiang Yin , Yu Chen , Nathan O. Weiss , Yu Huang , Xiangfeng Duan

We develop a practical approach to electrically tuning the nonlinear photoresponse of two-dimensional semiconductors by explicitly incorporating a static out-of-plane electric field into the electronic ground state prior to optical…

Layered two-dimensional (2-D) semiconductors can be combined with other low-dimensional semiconductors to form non-planar mixed-dimensional van der Waals (vdW) heterojunctions whose charge transport behavior is influenced by the…

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