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The vicinal Si(111) surface, inclined towards the [-1-12] direction, was investigated by scanning tunnelling microscopy and spot profile analysing low energy electron diffraction. It has been established that the surface, consisting of…

材料科学 · 物理学 2019-03-19 S. A. Teys , K. N. Romanyuk , R. A. Zhachuk , B. Z. Olshanetsky

We propose an extension of the Allen-Cahn model for pattern synthesis on two dimensional curved surfaces. This model is based on a single PDE and it offers improved ability of controlling the type of generated surface patterns via the…

数值分析 · 数学 2020-08-19 Lorina Dascal , Gautam Pai , Ron Kimmel

We present an efficient machine learning framework for detection and classification of nanoparticles on surfaces that are detected in the far-field with Coherent Fourier Scatterometry (CFS). We study silicon wafers contaminated with…

光学 · 物理学 2020-07-15 D. Kolenov , S. F. Pereira

Modeling arbitrarily large deformations of surfaces smoothly embedded in three-dimensional space is challenging. The difficulties come from two aspects: the existing geometry processing or forward simulation methods penalize the difference…

图形学 · 计算机科学 2022-08-10 Jiahao Wen , Bohan Wang , Jernej Barbič

Monolayer graphene epitaxially grown on SiC(0001) was etched by H-plasma and studied by scanning tunneling microscopy and spectroscopy. The etching created partly hexagonal nanopits of monatomic depth as well as elevated regions with a…

介观与纳米尺度物理 · 物理学 2019-07-24 André E. B. Amend , Tomohiro Matsui , Hiroki Hibino , Hiroshi Fukuyama

Patterns on broken surfaces are well-known from everyday experience, but surprisingly, how and why they form are very much open questions. Well-defined facets are commonly observed1-4 along fracture surfaces which are created by slow…

软凝聚态物质 · 物理学 2018-02-14 Itamar Kolvin , Gil Cohen , Jay Fineberg

The formation of graphene on the SiC(000-1) surface (the C-face of the {0001} surfaces) has been studied, utilizing both disilane and neon environments. In both cases, the interface between the graphene and the SiC is found to be different…

介观与纳米尺度物理 · 物理学 2015-06-05 Guowei He , N. Srivastava , R. M. Feenstra

A comparison of porous structures formed from silicon (Si) wafers with different resistivities has been reported here based on the morphological studies carried out using scanning electron microscope (SEM). The porous Si samples have been…

介观与纳米尺度物理 · 物理学 2016-09-01 Shailendra K Saxena , Gayatri Sahu , P. K. Sahoo , Pankaj R. Sagdeo , Rajesh Kumar

Simulating high-resolution Synthetic Aperture Radar (SAR) images in complex scenes has consistently presented a significant research challenge. The development of a microwave-domain surface scattering model and its reversibility are poised…

计算机视觉与模式识别 · 计算机科学 2024-01-03 Jiangtao Wei , Yixiang Luomei , Xu Zhang , Feng Xu

A detailed microstructural investigation was performed to understand structural characteristics of a reaction-bonded B$_4$C/SiC ceramic composite. The state-of-the-art focused ion beam & scanning electron microscopy (FIB/SEM) and…

材料科学 · 物理学 2017-06-07 Tianshi Wang , Chaoying Ni , Prashant Karandikar

The damage mechanisms and load redistribution of high strength TC17 titanium alloy/unidirectional SiC fibre composite (fibre diameter = 100 $\mu$m) under high temperature (350 {\deg}C) fatigue cycling have been investigated in situ using…

In a hierarchical nanopatterning routine relying exclusively on self-assembly processes we combine crystal surface reconstruction, microphase separation of copolymers, and selective metal diffusion to produce monodisperse metal…

介观与纳米尺度物理 · 物理学 2017-07-07 Denise Erb , Kai Schlage , Ralf Röhlsberger

We investigate the initial stage of the 2D-3D transition of strained Ge layers deposited on pit-patterned Si(001) templates. Within the pits, which assume the shape of inverted, truncated pyramids after optimized growth of a Si buffer…

Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile…

We rigorously prove the bifurcation of slow-moving pattern interfaces with general direction in a two-dimensional Swift-Hohenberg-type model close to a Turing instability for a large class of nonlinearities. These interfaces describe the…

偏微分方程分析 · 数学 2026-04-13 Bastian Hilder , Jonas Jansen

The ability to create complex geometries with tailored material properties has brought interest in using additive manufacturing (AM) techniques in various industrial applications. However, the complex relationship between AM process…

We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first…

材料科学 · 物理学 2009-11-13 J. Hass , J. E. Millan-Otoya , P. N. First , E. H. Conrad

The ab initio calculation with the density functional theory and plane-wave bases is carried out for stepped Si(111)-2x1 surfaces that were predicted in a cleavage simulation by the large-scale (order-N) electronic structure theory (T.…

材料科学 · 物理学 2015-05-14 Takeo Hoshi , Masakazu Tanikawa , Akira Ishii

Understanding the local fracture resistance of microstructural features. such as brittle inclusions, coatings, and interfaces at the microscale under complex loading conditions is critical for microstructure-informed design of materials. In…

Scanning tunneling microscopy (STM) images are obtained for the first time on few layer and twisted multilayer epitaxial graphene states synthesized on n+ 6H-SiC a-plane non-polar surface. The twisted graphene is determined to have a…