相关论文: Surface Structuring of Patterned 4H-SiC Surfaces U…

We have investigated the nanostructure and microstructure resulting from ns laser irradiation simultaneous with deposition of Co films on Si(001) substrates. The spatial order and length scales of the resulting nanopatterns and their…

Growth of epitaxial graphene on the C-face of SiC has been investigated. Using a confinement controlled sublimation (CCS) method, we have achieved well controlled growth and been able to observe propagation of uniform monolayer graphene.…

The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW) materials, e.g. Bi$_2$Te$_3$. Here, we report the formation of a Te buffer layer on Si(111)$-$(7$\times$7) by low-energy…

Assembling nanostructured building blocks into network materials unlocks macroscopic properties inaccessible with monolithic solids, notably toughness and tolerance to electrochemical alloying. A method is reported for large-scale,…

Conforming materials to rigid substrates with Gaussian curvature --- positive for spheres and negative for saddles --- has proven a versatile tool to guide the self-assembly of defects such as scars, pleats, folds, blisters, and liquid…

We study step flow growth of epitaxial graphene on 6H-SiC using a one dimensional kinetic Monte Carlo model. The model parameters are effective energy barriers for the nucleation and propagation of graphene at the SiC steps. When the model…

Macroscopic modeling of a non-crimp fabric's (NCF's) forming behavior is challenging as it strongly depends on the textile architecture, fiber type, and stitching type. While shear is the main deformation mode of woven fabrics, membrane…

A novel bilayer is introduced, consisting of a stiff film adhered to a soft substrate with patterned holes beneath the film and substrate interface. To uncover the transition of surface patterns, two dimensional plane strain simulations are…

This communication covers investigation of the structural properties of surfaces of Si epitaxial layers deposited on different Si(001) vicinal substrates. We have shown processes of generation and growth of surface defects to depend on tilt…

Quasi-brittle materials endowed with (statistically) self-similar hierarcical microstructures show distinct failure patterns that deviate from the standard scenario of damage accumulation followed by crack nucleation-and-growth. Here we…

We investigate experimentally the quenching of a liquid pancake, obtained through the impact of a water drop on a cold solid substrate ($0$ to $-60^\circ$C). We show that, below a certain substrate temperature, fractures appear on the…

In this study the growth process of epitaxial graphene on SiC was investigated systematically. The transition from the initial buffer layer growth to the formation of the first monolayer graphene domains was investigated by various…

We perform local nanoscale studies of the surface and interface structure of hydrogen intercalated graphene on 4H-SiC(1000). In particular, we show that intercalation of the interfacial layer results in the formation of quasi-free standing…

Structuring Si in arrays of vertical high aspect ratio pillars, ranging from nanoscale to macroscale feature dimensions, is essential for producing functional interfaces for many applications. Arrays of silicon 3D nanostructures are needed…

The morphology evolution of Si (100) surfaces under 1200 eV Ar+ ion bombardment at normal incidence with and without metal incorporation is presented. The formation of nanodot patterns is observed only when the stationary Fe concentration…

Pattern matching approaches to electron backscatter diffraction (EBSD) in the scanning electron microscope (SEM) provide qualitatively new possibilities for the microstructural analysis of chiral non-centrosymmetric phases due to the…

Reliable and precise etching of silicon nanostructures with ultra-high aspect ratios is required in many fields. Metal assisted chemical etching (MacEtch) in vapor is a plasma-free etching method that attracts considerable attention owing…

Inductively Coupled Plasma (ICP) etching of amorphous silicon (a-Si) nanostructures using a continuous C4F8/SF6 plasma over nanotopography in silicon dioxide (SiO2) is investigated. The coil power of the ICP system is used to tune the a-Si…

For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via…

We detail several scientific and engineering innovations which enable the controlled spalling of 10 - 50 micron thick films of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal…